Allicdata Part #: | IXTM12N100-ND |
Manufacturer Part#: |
IXTM12N100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | N-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO... |
DataSheet: | IXTM12N100 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
Vgs (Max): | ±20V |
Series: | GigaMOS™ |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
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IXTM12N100 is a type of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is widely used in controlling the flow of electricity using low power signals. It has an interface that acts as a gate to control the flow of electricity. It has a breakdown or threshold voltage of 12 volts and an input capacitance of 100 pF. It is well suited for high frequency applications.
This MOSFET has a number of features that make it ideal for use in a variety of applications. First, it is a enhancement type of MOSFET meaning that it is only active and can pass current when its gate is provided with a positive voltage and above the threshold voltage. As such, it can be used to control the flow of current in an efficient manner. Furthermore, it has a very low gate threshold which allows it to be used for high speed switching applications with very little switching noise.
The IXTM12N100 MOSFET can be used in the switching applications involving high-frequency signals. It is particularly suited for controlling the flow of current to the inductive loads like solenoids, flex leads and other similar devices where low ON-state resistance and fast switching is required. It can also be used for switching power supplies, motor control and switching circuits, and servo control systems amongst other applications.
The working principle of the IXTM12N100 MOSFET is based on the voltage controlled current flow. When a voltage is applied to the gate terminal, it creates an electric field which attracts the electrons away from the source to the drain. As a result, current flow is controlled by the magnitude of the voltage applied to the gate. The device’s ON-state resistance is determined by the channel length to width ratio, and it is usually low enabling it to switch at high frequency.
In conclusion, the IXTM12N100 MOSFET is a single MOSFET with a low gate threshold and a high breakdown voltage and is suitable for use in applications involving switching, controlling, and regulating high frequency signals. Its low ON-state resistance and fast switching make it ideal for controlling inductive loads, power supplies, and servo control systems and motors. Its working principle is based on the voltage controlled current flow whereby it is activated when a voltage is applied to the gate and the magnitude of the current flowing through the device is determined by the magnitude of the voltage applied at the gate.
The specific data is subject to PDF, and the above content is for reference
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