Allicdata Part #: | IXTM24N50L-ND |
Manufacturer Part#: |
IXTM24N50L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | |
DataSheet: | IXTM24N50L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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The IXTM24N50L is a highly reliable, high voltage, high-speed Insulated Gate Bipolar Transistor, or IGBT. This type of transistor is useful for power switching and motor control applications, as it offers superior performance with low losses and low noise. The IXTM24N50L is a single IGBT, meaning that only one path is available for current to flow through.
The IGBT is an advanced type of transistor, which combines the properties and characteristics of both bipolar transistors and MOSFETs. This hybrid transistor type allows for high-speed switching, low losses, and a wide range of current drive capabilities. It also provides protection against over current, over voltage, and short circuit conditions.
The IXTM24N50L is designed with a voltage rating of 900 volts, a logic level gate drive, and a current rating of 21 amperes. It is designed with a low input capacitance, low on-resistance, fast switching speed, and low noise generation. The transistor can be used in Buck converters, DC to DC converters, and various other control and switching applications.
The IXTM24N50L works by using the voltage on the gate to control the amount of current flowing through the drain and source. The IGBT uses a built-in MOSFET to turn the current from the drain and source either on or off, allowing for high-speed switching capabilities. When the gate voltage is high, the MOSFET is turned on and current can flow from the drain to the source; when the gate voltage is low, the MOSFET is turned off and no current can flow.
The IXTM24N50L is a valuable component for applications that require high-speed switching and reliable current control, especially when combined with other IGBTs. It is used in many automotive applications and is a common component in DC/DC H-bridge circuits. The IXTM24N50L is also used in energy storage systems, renewable energy solutions, and electric motor control systems.
In sum, the IXTM24N50L is a single IGBT that provides superior performance in power switching and motor control applications. It is designed with a high voltage rating, a logic level gate drive, low input capacitance, and a low on-resistance. It can be used in DC/DC H-bridges, Buck converters, as well as energy storage systems, renewable energy solutions, and electric motor control systems.
The specific data is subject to PDF, and the above content is for reference
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