IXTM50N20

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTM50N20 is a N channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for high power applications and comes in a TO-220AB package. It is appropriate for use in high voltage circuit, audio amplifiers, pulse circuits and low noise circuits.The IXTM50N20 is a single MOSFET that exhibits a high-power rating of 50 amps and a voltage withstand limitation of 200 Volts. Its high power rating means that it is right for use as an amplifier or a switch in robust, high current applications.The IXTM50N20 offers superior handling of high pulse currents needed in switching applications, such as motor drives and inverters. Its low gate charge characteristics help minimize losses in bridge circuits by producing low switching speeds.The IXTM50N20 is constructed with preferential Oxide and Gate layers to reduce energy leakage, eliminate the need for pulse triggering and minimize switching losses. The IXTM50N20 is composed of overlapping Metal Oxide layers that run across the device with a high-k gate oxide layer for improved thermal resistance.The IXTM50N20 offers superior heat dissipation levels and low gate charge characteristics that reduce power consumption, making it ideal for use in low power and low current applications. It also has a low thermal resistance and can withstand negative gate to source voltage.Overall, the IXTM50N20 is an efficient and reliable MOSFET that provides the necessary performance levels to ensure reliable high-power switching and to provide improved performance in audio applications. Its low gate charge characteristics and superior heat dissipation specification make it an ideal choice for use in industrial, automotive and medical applications.

The specific data is subject to PDF, and the above content is for reference