Allicdata Part #: | IXTM40N30-ND |
Manufacturer Part#: |
IXTM40N30 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXTM40N30 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Package / Case: | TO-204AE |
Supplier Device Package: | TO-204AE |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 25V |
Vgs (Max): | ±20V |
Series: | GigaMOS™ |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 88 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
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The IXTM40N30 is a transistor manufactured by Infineon Technologies, designed to be used as MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in applications that require high performance, low power consumption and small form factors.
The IXTM40N30 is a level IV VDMOS (Volumetric Double Diffused MOSFET), developed especially with power supply applications in mind. It is rated for 60A, has a drain-source breakdown voltage of 40V (VDSS), and is built on the DBC-6 process - a 0.25µm dielectric layer for high speed operation at low power.
The IXTM40N30 is a single-channel, N-channel MOSFET with a very low on-resistance of 0.035 Ω and low gate charge of 19nC. This makes it suitable for use in high-performance, high-current power supply applications, as it can be used to minimize conduction and switching losses in the circuit.
The IXTM40N30 is also designed to minimize the common-mode and the differential mode noise, enabling the device to be used in sensitive systems such as motor or servo drives or precision power supplies, where power noise must be minimized. This is achieved by an increased gate-source voltage which provides enhanced noise immunity.
In order to maximize the output performance and stability of the IXTM40N30, Infineon Technologies provides a set of protection features. These include a body diode, current protection, overvoltage protection, and thermal protection (or Thermo-Fet). The thermofet protection detects when the temperature of the device is too high and cuts off the device to prevent damaging the circuit.
The IXTM40N30 can be used in low side and high side applications. In low side applications, the MOSFET is used to force current from the load to ground. In high side applications, the MOSFET is used to force current from the supply through the load. The IXTM40N30 is also capable of bidirectional current flows, making it suitable for applications where two or more power sources or loads need to be managed.
The IXTM40N30 is applicable in a wide range of applications such as automotive, professional power supplies, consumer electronic applications, motor control systems, lighting, AC/DC/DC converters, converters, gaming consoles phones and tablets.
In summary, the IXTM40N30 is a highly-reliable, low-power high-performance single-channel N-channel MOSFET, developed for use in high-current, high-speed and low-noise power supply applications. Its unique features and advanced protection mechanisms make it ideal for a variety of applications ranging from automotive to professional to consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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