| Allicdata Part #: | IXTM11N80-ND |
| Manufacturer Part#: |
IXTM11N80 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | POWER MOSFET TO-3 |
| More Detail: | N-Channel 800V 11A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTM11N80 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
| Package / Case: | TO-204AA, TO-3 |
| Supplier Device Package: | TO-204AA |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | GigaMOS™ |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 950 mOhm @ 5.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
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Introduction of IXTM11N80：IXTM11N80 is a Power MOSFET with low gate charge, high transconductance and fast switching, which are designed for use in a variety of load switching and levelshifting applications. So, the IXTM11N80 device is the ideal choice when low on-resistance and good switching characteristics are necessary.
Application Field of IXTM11N80：
- Switching regulators
- DC-to-DC converters
- Synchronous rectifiers
- Low voltage motor drives
- PWM power amplifiers
- Automotive Audio Circuits
- CPU Secondary Side MOSFETs
Working Principle of IXTM11N80：The working principle of IXTM11N80 is based on the MOSFET\'s behavior when a voltage is applied between the gate and source. When the voltage between the gate and source is increased, the resistance between the source and drain decreases, allowing current to flow. Conversely, when the voltage between the gate and source is decreased, the resistance between the source and drain increases, and current is reduced. This is how the IXTM11N80 controls current through the transistor.
Advantages of IXTM11N80：The IXTM11N80 is an excellent choice for a variety of loads switching and level shifting applications because of its high breakdown voltage, low gate threshold voltage, low input capacitance, fast switching speed, and low on-resistance. It also features ESD protection and a drain-source diode for reverse voltage protection.
Conclusion：The IXTM11N80 is a Power MOSFET with low gate charge, high transconductance and fast switching, which are designed for use in a variety of load switching and levelshifting applications. Due to its high breakdown voltage, low gate threshold voltage, low input capacitance, fast switching speed, low on-resistance and other features, IXTM11N80 is an excellent choice for a variety of load switching and level shifting applications.
The specific data is subject to PDF, and the above content is for reference
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