Allicdata Part #: | IXTM11P50-ND |
Manufacturer Part#: |
IXTM11P50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | |
DataSheet: | IXTM11P50 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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IXTM11P50 is a widely used N-channel Enhancement Mode MOSFET used for controlling and switching signals in a wide variety of applications. It is a small-sized transistor, which can be used for SMPS, DC/DC Converter, Audio/Video Amplifiers, Motor Control, Mobile Phone, Digital Circuits, etc.
IXTM11P50 is manufactured in the planar form and comes with an integrated gate terminal. It is designed to operate at an enhanced speed of up to 11GHz. Its body length is just 0.6mm thus making it a space conserving choice. It operates at an input voltage ranging from 4.5V to 11V and can withstand a gate drain voltage of -11V.
IXTM11P50 offers excellent characteristics of low on-state resistance (RDS (on)) and high channel-blocking voltage as well as low gate drive power
The field effect transistor (FET) is a semiconductor device which is used to provide electrical switching and amplifying capabilities. It differs from other types of transistors in that it utilizes the electrical field created by an applied voltage to control electrical current in the transistor. The FET is also referred to as an electro-controlled device as it is often used to control electrical current in electronic circuits.
The most common type of FET is known as the metal-oxide-semiconductor field effect transistor (MOSFET) which is used for switching and amplifying signals. The IXTM11P50 is an example of this type of FET. It is classified as a single MOSFET, meaning that it has only one gate terminal.
The working principle of IXTM11P50 is based on the fact that when a positive voltage is applied to the gate terminal of the transistor, it creates a field around it which attracts additional electrons from the N-type material in the transistor. This influx of electrons causes the transistor to turn on and allows current to flow through it.
IXTM11P50 can be used for a number of applications due to its low on-state resistance (RDS (on)) and high channel-blocking voltage characteristics. These include: power converters, audio/video amplifiers, voltage regulator, motor control applications, mobile phone circuits and many other applications.
In sum, IXTM11P50 is an N-channel Enhancement Mode MOSFET that offers high input impedance and is used for controlling and switching signals in a variety of applications. Its low on-state resistance and high channel-blocking voltage make it an ideal choice for a number of applications. Additionally, its small size makes it easy to mount on a printed circuit board.
The specific data is subject to PDF, and the above content is for reference
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