Allicdata Part #: | IXTM1630-ND |
Manufacturer Part#: |
IXTM1630 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | |
DataSheet: | IXTM1630 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
Description
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IXTM1630 Applications and Working Principles
The IXTM1630 is a state-of-the-art MOSFET that offers improved performance and higher levels of reliability. It is designed to facilitate fast switching and high current handling capability while retaining the low loss, lower power dissipation, and small size benefits of an earlier generation MOSFET.IXTM1630 Features
The IXTM1630 features several key features that make it an attractive option in MOSFET technology. Among these are its improved efficiency and higher voltage ratings, which make it ideal for applications that require high current or fast switching. In addition, the transistors package provides a smaller size and improved thermal properties, making it ideal for both commercial and military use.IXTM1630 Applications
Given its excellent thermal and electrical performance, the IXTM1630 is widely used in a variety of applications, including high power switching for power electronics, RF power applications, motor drives, and motor control. In addition, because of its improved efficiency and higher voltage ratings, the IXTM1630 is also ideal for applications requiring very high switching frequencies, such as DC-DC converters and power inverters.IXTM1630 Working Principle
At the core of the IXTM1630’s performance is its superior MOSFET technology. This technology utilizes a channel made up of a multiple layer gate insulator and channel type nanostructures to achieve higher current flows and faster switching speeds than a traditional MOSFET. This is because the nanostructures allow electrons to move quickly and more efficiently through the channel, improving on-state current conduction and switching speed.The IXTM1630 is also able to achieve these improved performance characteristics due to its high quality packaging, which is designed to support better mechanical isolation and improved thermal qualities. Its superior packaging also offers superior isolation from thermal or electrical noise and better protection from age-related failures.Conclusion
The IXTM1630 is an advanced MOSFET gate driver that has many noteworthy benefits — improved efficiency and higher voltage ratings for faster switching and higher current handling capability, low loss, improved thermal attributes due to its small size and superior packaging, and improved reliability due to its superior mechanical isolation and age-related failure protection. All of these features make the IXTM1630 an excellent choice for many applications, including high power switching, RF power applications, motor drives, and motor control.The specific data is subject to PDF, and the above content is for reference
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