IXTM5N100A

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The IXTM5N100A is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured by IXYS Corporation. It is part of a series of medium-voltage MOSFETs under the IXYS iMOS (Integrated MOSFET) product line. The IXTM5N100A, specifically, is a single or double source metal-oxide semiconductor device that conforms to RoHS standards and is housed in a ITO-220AB package.

The IXTM5N100A was designed as an efficient switch with excellent switching performance. It is capable of operating with a drain-source voltage of 100V with a maximum power dissipation of 230 watts. This makes it suitable for a range of power applications requiring high voltage, such as AC servo motors, solar inverters, and uninterruptible power supplies. Additionally, it is able to switch currents of up to 7A. The maximum junction temperature is 175°C and its gate-source voltage pinch-off is 4V.

The IXTM5N100A is also capable of bi-directional operation and is compatible with many logic-level requirements and technologies. Its static characteristics include an on-state resistance of only 0.024 ohms, making it ideally suited for applications in which power loss resulting from resistive heating is a major concern. Its switching times (defined as transition times from saturation to cutoff) are incredibly fast, further enhancing its suitability for applications requiring fast responses.

The IXTM5N100A works in the same basic manner as other MOSFET transistors. Basically, a positive voltage applied to its gate is used to attract electrons to the channel between the source and drain, creating an inverted conductive channel. This channel allows current to flow between the source and drain, enabling the device to effectively function as a switch. This makes it suitable for applications such as digital circuits and pulse-width modulation, among others.

In conclusion, the IXTM5N100A is an efficient single MOSFET designed for high voltage applications requiring low power losses and fast switching times. It is capable of supporting drain-source voltages of up to 100V, currents of up to 7A, and maximum power dissipations of 230 watts. It is also highly suited for digital and pulse-width modulation applications.

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