JAN2N1485

Series:	Military, MIL-PRF-19500/207
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 40mA, 750mA
Current - Collector Cutoff (Max):	15µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 750mA, 4V
Power - Max:	1.75W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-233AA, TO-8-3 Lens Top Metal Can
Supplier Device Package:	TO-8

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Introduction

JAN2N1485 is a type of bipolar junction transistor (BJT). BJTs are commonly used for electronic amplification because a small amount of current (input) can be used to control a much larger amount of current (output). BJTs consist of two PN-junctions formed by two layers where one of them is N-type and the other is P-type material. BJTs are three-terminal devices and have current and voltage ratings in the device.

Application Field of JAN2N1485

The JAN2N1485 is a general purpose BJT which is ideal for use in linear, low-noise, and small-signal amplification applications. It is also commonly used in medium power applications, such as in audio amplifiers, low-power radio-frequency (RF) amplifiers and switching circuits. Its maximum operating temperature limit is 175 degrees Celsius, so it is suitable for higher temperature applications.JAN2N1485 is suitable for use in a wide range of applications, from low-power digital logic circuits to high-power radio frequency switching applications. In addition, this type of transistor can be used for signal detection, signal generation, signal buffering, and other linear and small-signal applications.

Working Principle of JAN2N1485

The working principle of JAN2N1485 involves the modulation of current between the emitter-base (E-B) PN-junction, and the collector-base (C-B) PN-junction. The modulation of current is done by controlling the voltage levels at the emitter-base junction.In order to switch the current flow at the collector-base junction, the transistor must be biased properly. This involves setting the bias voltage to the base such that the current at the collector-base junction is controlled within the limits of the device.The current flow at the collector-base junction depends upon the bias voltage of the base. When the base bias voltage is increased, the current at the collector-base junction decreases, and vice versa.The JAN2N1485 transistor also has a saturated region, where the current at the collector-base junction is close to zero. This saturated region can be used for switching applications, as the current flow at this region can be quickly switched ON or OFF by varying the base bias voltage.

Conclusion

JAN2N1485 is a type of bipolar junction transistor that is commonly used for linear, low-noise, and small-signal applications. It has a maximum operating temperature of 175 degrees Celsius, making it ideal for high temperature applications. The working principle of JAN2N1485 involves the modulation of current between the emitter-base and collector-base PN-junctions, and the bias voltage of the base is used to control the current flow at the collector-base junction. The JAN2N1485 transistor also has a saturated region that can be used for switching applications.

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