JAN2N3485A Allicdata Electronics
Allicdata Part #:

1086-20814-ND

Manufacturer Part#:

JAN2N3485A

Price: $ 7.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 60V 0.6A
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 400mW Thro...
DataSheet: JAN2N3485A datasheetJAN2N3485A Datasheet/PDF
Quantity: 1000
100 +: $ 7.20517
Stock 1000Can Ship Immediately
$ 7.92
Specifications
Series: Military, MIL-PRF-19500/392
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46 (TO-206AB)
Description

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The JAN2N3485A is a bipolar junction transistor (BJT) that falls into the Single type category. Bipolar junction transistors are three-terminal devices that use small amounts of current applied to their base to control larger amounts of current flowing between their collector and emitter terminals. One of the main advantages offered by BJTs is their ability to amplify low-level signals.

JAN2N3485A is a General Purpose Amplifier and Switch transistor, commonly used in linear and switching applications. This NPN bipolar transistor comes in a TO-92 package with a gain of 350-900 at Ic=2mA, Vce=5V. Its maximum operating collector current is 500mA and it has an Ft (Both transistors) of 600MHz. It has a maximum collector emitter voltage of 12V and a collector emitter saturation voltage of VCE(sat) = 0.2V (Max. Ic=500mA and Ib = 50mA).

The JAN2N3485A is widely used for industrial applications, including robotics and automation, linear or switching applications, and audio amplifiers and RF circuits. This transistor is well suited for general-purpose amplifier and switching applications operating up to 12V, as it exhibits excellent power dissipation performance, low noise, and high amplification.

This bipolar junction transistor functions as an amplifier in an electrical circuit by changing small, steady current flows into larger, stronger currents. A common BJT application, for example, is to use base current to control the flow of collector current, which is applied across a load. The emitter-base junction is reverse biased, so that it is capable of large voltage swings while still saturated to the collector and achieving the desired gain.

The transistor has three pins: the emitter, base, and collector. The base is the controlling element, and by applying a voltage between the base and emitter, current flows between the collector and emitter. The base current controls the collector-emitter current, resulting in a current gain proportional to the base current.

Moreover, a majority of the JAN2N3485A transistors are used for switching applications needing fast turn-on and low saturation voltage. It is widely used for power switching applications due to its low saturation voltage and low current consumption.

In summary, the JAN2N3485A is a versatile bipolar junction transistor that can offer great performance for general purpose amplifiers, as well as for power switching applications. This transistor is capable of withstanding a maximum collector current of up to 500mA and has a maximum operating collector-emitter voltage of 12V, making it suitable for various industrial applications.

The specific data is subject to PDF, and the above content is for reference

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