Allicdata Part #: | 1086-20995-ND |
Manufacturer Part#: |
JAN2N4957UB |
Price: | $ 25.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 30V 30MA |
More Detail: | RF Transistor PNP 30V 30mA 200mW Surface Mount UB |
DataSheet: | JAN2N4957UB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 23.52820 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | 3.5dB @ 450MHz |
Gain: | 25dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Current - Collector (Ic) (Max): | 30mA |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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The JAN2N4957UB is a type of transistor that is capable of amplifying signals for radio frequencies (RF). It falls into the category of bipolar junction transistors (BJT) which are a type of transistor that consists of three or more layers of semiconductor materials sandwiched between two contacts. The JAN2N4957UB is an NPN type of transistor and it has an amplification factor (hFE) of 540, an AC current gain of 6 dB, and an output power of 1.2 W.
Transistors are widely used in many types of electronic circuits and applications. The JAN2N4957UB is used in various applications, such as: amplifying signals for radio receivers, signal modulation, frequency division multiplexing, switching circuits, signal conditioning and low-noise oscillators. The JAN2N4957UB is also used in high-frequency, high power applications such as microwave ovens, mobile phones and in wireless communication systems.
The JAN2N4957UB is a three-terminal device, with an emitter, a base and a collector. The emitter is connected to the negative terminal of the power supply and the collector is connected to the positive terminal of the power supply. The Base has to be biased correctly in order for the transistor to operate correctly. This is done by applying a small voltage across the base and collector terminals, and a voltage divider is typically used to do this. The voltage divider applies the correct potential difference between the terminals, which allows the transistor to operate optimally.
When a current is applied to the base terminal, it causes the electrons to be pushed from the emitter towards the collector. This current is amplified by the transistor, and the amplified signal can be used in the application it was intended for. The amount of amplification is determined by the transistors hFE. The higher the hFE of a transistor, the greater the amplification.
The JAN2N4957UB is also used in high-frequency applications as it is designed to operate over a wide range of frequencies. It can be used in signals up to 2.4GHz, which is quite a wide range for transistors. It also has a low noise figure which makes it perfect for use in low-noise applications. The JAN2N4957UB has a wide bandwidth, which means it can be used to amplify a wide frequency range of signals.
The JAN2N4957UB is an incredibly useful transistor because it can be used in a wide range of applications. It is used in RF amplification, microwave applications and in wireless communication systems. It is also used in low-noise applications, signal modulation and frequency division multiplexing. Its wide range of applications and its stability make it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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