JAN2N4150S

Series:	Military, MIL-PRF-19500/394
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	70V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 1A, 10A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 5A, 5V
Power - Max:	1W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39 (TO-205AD)

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The JAN2N4150S is a bipolar, NPN, silicon junction transistor. This transistor\'s specification provides high-frequency response and low noise characteristics. It is also well-suited for medium and high current audio amplifier applications.The JAN2N4150S is a single transistor, meaning that it is made up of three distinct layers. The collector layer, the base layer and the emitter layer are all responsible for the operation of the JAN2N4150S transistor. The collector layer is where the current flow occurs, the base layer acts as the control base and the emitter layer is where the current leaves the transistor.When a voltage is applied to the base layer, the transistor begins to conduct. The emitter layer then begins to pull electrons away from the collector layer, allowing current to flow. This current is known as the collector current or the operating current of the transistor. This current is then used to drive the application in which the transistor is being used.The current gain of a JAN2N4150S transistor is calculated by the formula:Current Gain = Collector Current / Base CurrentThe gain of a JAN2N4150S transistor varies depending on the collector current and the bias current fed to the base. The gain can range from 10 to better than 80.The JAN2N4150S is best suited for high-frequency audio applications. Its performance makes it well-suited for use in audio amplifiers, receivers, pre-amplifiers and sound systems.The JAN2N4150S is also well-suited for RF amplifier stages. For RF amplifier applications, the transistor is often driven with a pre-driver stage to make the system more efficient. A pre-driver stage is necessary to minimize the adverse effects of parameters such as capacitive loading.Another application for the JAN2N4150S is in switching circuits. In switching circuits, the JAN2N4150S is often used as a current switch. This is done by applying a voltage to the base. The voltage is then used to control the current through the collector-emitter path. This makes it useful in switching applications where low-power consumption is paramount.Lastly, the JAN2N4150S is used in many telecommunication circuits. This is because these types of transistors are small and provide high-frequency response. In addition, these transistors are also relatively inexpensive compared to other transistors.In conclusion, the JAN2N4150S is a versatile single transistor. Its performance makes it suitable for many applications. It is typically used in audio amplifiers, receivers, pre-amplifiers, sound systems, RF amplifiers, switching circuits, and telecommunication circuits. This versatile transistor can be used for a variety of applications and is often used for its low noise and high frequency response performance.

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