JAN2N1711

Series:	Military, MIL-PRF-19500/225
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	800mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

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Introduction

The JAN2N1711 is a single bipolar junction transistor (BJT) designed for use in amplifying, switching and switching current applications. The transistor is constructed from a single crystalline substrate composed of silicon, with a base diffusion area, an emitter diffusion area, and a collector diffusion area.The JAN2N1711 is characterized by a PNPN switching action, a large current gain (hFE), median frequency fT of 14 MHz, high DC current gain (hFE) of 20 minimum at 1 Ampere and a maximum collector current of 4 A.

Basic Components

The JAN2N1711 consists of three primary components: the base, collector, and emitter. The base is an N-type semiconductor material that is forward-biased to allow current to flow between the collector and emitter. The collector is a P-type semiconductor material, and is reverse-biased to block current from flowing from the emitter to the collector. The emitter is an N-type semiconductor material and is connected to the base and collector.

Operating Principle

The transistor operates in three basic modes: cutoff, saturation, and active. In cutoff mode, the base-emitter junction is reverse biased, so no current flows from the emitter to the collector. In saturation mode, the base-emitter junction is forward biased, so current can flow from the emitter to the collector. In active mode, the base-emitter junction is forward biased, but the base-collector junction is reverse biased, so current cannot flow from the collector to the emitter.The JAN2N1711 has a maximum collector-emitter voltage (VCE) of 40V, a maximum collector current (IC) of 16A, and a maximum power dissipation of 250W. The maximum junction temperature (TJ) is 175C.

Applications

The JAN2N1711 is used in a variety of applications, such as power amplifiers, audio systems, switch-mode power supplies, and motor control.In power amplifier applications, the JAN2N1711 can be used to provide efficient power stage switching, either in single supply or push pull amplifier designs. The JAN2N1711 can also be used in audio systems to control signal routing and switching.Inswitch mode power supplies, the JAN2N1711 can be used to control the switching of on/off states. This results in efficient power transfer between inputs and outputs, while maintaining a low output impedance.In motor control applications, the JAN2N1711 can be used to provide efficient control of the speed and direction of the motor.

Conclusion

The JAN2N1711 is a single bipolar junction transistor (BJT) that is designed for amplifying, switching and switching current applications. It has a PNPN switching action, a high current gain (hFE), a median frequency fT of 14 MHz, and a maximum collector current of 4 A. It is used in power amplifier applications, audio systems, switch-mode power supplies, and motor control applications.

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