Allicdata Part #: | JAN2N6849-ND |
Manufacturer Part#: |
JAN2N6849 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET P-CH 100V 6.5A TO-39 |
More Detail: | P-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Thro... |
DataSheet: | JAN2N6849 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/564 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 320 mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34.8nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 800mW (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-39 |
Package / Case: | TO-205AF Metal Can |
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The JAN2N6849 is a type of transistor known as a field effect transistor (FET), more specifically a metal-oxide-semiconductor field effect transistor (MOSFET). Field effect transistors are a family of unipolar transistors, meaning they have only one active area of the semiconductor and have no need for a gate bias. They are used extensively in electronics and computer systems, due to their low voltage, low power draw and robust performance.
A JAN2N6849 transistor is a particular type of FET. This device is a popular choice for many applications, as it is a three-terminal, N-channel MOSFET. It is designed for high input and output impedance, making it particularly useful for high speed, low-power transistors. Additionally, the device is widely used in high efficiency switching applications and amplifier designs.
The JAN2N6849 transistor works by using a gate voltage to control current flow between the drain and the source. This type of device is a depletion-mode MOSFET, meaning the gate actually works to reduce the current. A positive voltage applied to the gate will reduce the drain current by reducing the conductivity of the channel. By contrast, a negative voltage will increase channel conductivity, allowing more current to flow through the channel.
This device has a variety of applications. For example, it can be used in power management systems, such as powering up and down processors. In audio circuits, the JAN2N6849 is used as part of amplification and signal processing, and it is also used in digital-to-analog converters (DACs). It can also be used for radio frequency (RF) signal modulation and for controlling the speed of motors.
The key to understanding how the JAN2N6849 works lies in the voltage applied to the gate. This device can be used as either an enhancement-type or depletion-type MOSFET, and the gate voltage will control which mode the device is in. With an applied voltage to the gate, the channel resistance can either be increased or decreased, and this will determine the current through the device.
The JAN2N6849 is an efficient and reliable type of MOSFET, with a wide range of applications. It can easily be used for power management, signal processing, RF modulation, and motor control. Thanks to its sophisticated design, this transistor is able to handle high input and output impedances, making it a great choice for applications requiring high-speed, low-power operation.
The specific data is subject to PDF, and the above content is for reference
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