JAN2N3439L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

JAN2N3439 L is a small signal, high gain NPN bipolar junction transistor (BJT). It was designed for use in general digital, analog and high frequency applications. The device features a low collector-emitter saturation voltage, a low collector-base capacitance, and a low on-resistance in its voltage mode of operation. It is very robust and reliable, and is suitable for a variety of applications including amplifiers, oscillators, filters, and switching circuits.

JAN2N3439 L is a single transistor, meaning it is made of one P-type semiconductor layer and one N-type semiconductor layer, which are separated by a thin layer of insulating material. It has a metal base and metal collector, with the base being connected to the N-type layer, and the collector being connected to the P-type layer. The base-emitter junction is forward biased, meaning current can flow from the base to the emitter, and the collector-emitter junction is reverse biased, meaning current can only flow from the collector to the emitter.

The collector current of an NPN BJT is controlled by the current flowing into the base terminal. This is known as current amplification. The current amplification factor of JAN2N3439L is typically between 40 and 200, depending on the collector-emitter bias voltage. This makes it ideal for use in various digital and analog circuits.

JAN2N3439L can also be used as a switch. When the base current is high enough, it will turn the transistor on and current will flow from the collector to the emitter. This is known as saturation. However, when the base current is too low, the transistor will be off and no current will be able to flow from the collector to the emitter. This is known as the cutoff region, where current is blocked. JAN2N3439L is suitable for use as a switch in switching circuits.

In summary, JAN2N3439L is a robust and reliable single bipolar junction transistor designed for use in a variety of general digital, analog and high frequency applications. It has a high current amplification factor and can be used as a switch in switching circuits. Its features include a low collector-emitter saturation voltage and low collector-base capacitance, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference