
Allicdata Part #: | 1086-20776-ND |
Manufacturer Part#: |
JAN2N2920U |
Price: | $ 35.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS 2NPN 60V 0.03A |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 32.27250 |
Series: | Military, MIL-PRF-19500/355 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 30mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1mA, 5V |
Power - Max: | 350mW |
Frequency - Transition: | -- |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-SMD |
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JAN2N2920U Application Field and Working Principle
The JAN2N2920U is a two-stage in-line amplifier transistor array, and belongs to the category of bipolar (BJT) arrays. It is typically used for gain control, filter control and amplifier and conversion stages. The JAN2N2920U offers excellent performance, combining high collector and power gain in a single device.
Features
- High collector currents
- Latched state protection
- Low on-resistance
- Greater stability and immunity to noise
- Integrated ESD protection
- Self-biasing transistors
Applications
- Gain control
- Filter control
- Driver amplifier
- Conversion stages
- Synchronous rectifier
- High-speed switching
Working Principle
The JAN2N2920U transistor array is composed of two bipolar transistors. Each transistor consists of an emitter, a collector and a base terminal. The base of each transistor is linked with its negative neighbor, creating a current path for the positive bias. The positive bias provided to the base terminal is used to modulate the current flow from the collector to the emitter. An increase in the amount of bias provided to the base terminal will cause an increase in the amount of current flowing between the collector and the emitter.
The JAN2N2920U is self-biasing, meaning that the operating cycle of the transistor is self-adjusting and adjusted according to the conditions of the load. The load can be continuously varied according to the desired output. This is an important feature as it allows the user to tailor the transistor’s response based on the load and the application.
The JAN2N2920U also offers an integrated ESD protection. This protection is provided by a grid of resistors located within the transistor itself. These resistors help dissipate any electrostatic charge from the transistor’s terminals, thus providing a higher level of safety for the circuit.
The JAN2N2920U has a variety of applications making it one of the most versatile and popular transistors used. Due to the integrated ESD protection, it can be used in high-speed switching applications, synchronous rectification, and gain control and filter control. By combining high power gain, high collector current, low on-resistance and excellent ESD protection, the JAN2N2920U is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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