| Allicdata Part #: | 1086-21001-ND |
| Manufacturer Part#: |
JAN2N5003 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS PNP 80V 5A TO59 |
| More Detail: | Bipolar (BJT) Transistor PNP 80V 5A 2W Stud Mount... |
| DataSheet: |  JAN2N5003 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | Military, MIL-PRF-19500/535 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 5A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max): | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 2.5A, 5V |
| Power - Max: | 2W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Stud Mount |
| Package / Case: | TO-210AA, TO-59-4, Stud |
| Supplier Device Package: | TO-59 |
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The JAN2N5003 is a NPN general-purpose transistor from the BC family, originally designed for industrial applications. The JAN2N5003 is known for its high switching speeds and low power consumption, and it is commonly used in RF systems, power supplies, and signal processing.
The JAN2N5003 is classified as a Single Bipolar Junction Transistor (BJT). A single BJT is a three-layer semiconductor device where one layer is P-Type and two layers are N-Type. When a voltage is applied to the Base-Emitter junction of the BJT, current will flow from the Emitter to the Collector. The current flow from the Emitter to the Collector is controlled by the voltage applied to the Base-Emitter junction.
The JAN2N5003 can handle up to 30V and 200mA. The breakdown voltage rating of the JAN2N5003 is between 800 and 1000 volts. The maximum operating frequency of the JAN2N5003 is 1MHz. The JAN2N5003 also has a low turn on time of 10µs and a high switching speed of 150ns.
The JAN2N5003 has many applications. It is commonly used in RF systems as an oscillator circuit. It can also be used as an amplifier or mixer in power supplies and signal processing applications. The JAN2N5003 is also used in low-noise amplifiers, high-frequency amplifiers, low-power circuit design, and switching circuits.
The working principle of the JAN2N5003 is similar to that of other BJTs. It is composed of 3 layers, with one P-Type layer and two N-Type layers. When a voltage is applied to the Base-Emitter junction, current will flow from the Emitter to the Collector. This current is controlled by the voltage applied to the Base-Emitter junction. The amount of current that can pass through is known as the Collector-Base current gain.
The JAN2N5003 is a popular choice for many applications due to its high switching speeds and low power consumption. It is commonly used in RF systems, power supplies, and signal processing, and is known for its reliable performance and low electrical noise.
The specific data is subject to PDF, and the above content is for reference
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