JAN2N3810U

Series:	Military, MIL-PRF-19500/336
Packaging:	Bulk
Part Status:	Active
Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 100µA, 1mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 1mA, 5V
Power - Max:	350mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-78-6 Metal Can
Supplier Device Package:	TO-78-6

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JAN2N3810U Application Field and Working Principle

Introduction

The JAN2N3810U is a high power Integrated High Power Stack (IHPS) transistor array manufactured by NXP. The transistor is able to work at high voltage and power level and has a low capacitance input buffer. This array offers a high level of operation at hundreds of amperes and works for many applications in power systems such as lighting, pulsed power, high voltage D/A circuits, or industrial controls. This article will describe in detail the application field and working principle of the JAN2N3810U.

Application Field

The JAN2N3810U is designed to deliver hundreds of amperes of power in applications such as lighting and pulsed power systems. It is also a good choice for pulse width modulation power supplies, and power converters. In lighting applications, the high current output of the device is ideal for driving high power light sources. For example, it can be used to drive metal halide lamps, xenon flash lamps and other high power light sources. It can also be used for driving low voltage bulbs such as fluorescent and incandescent bulbs. This unique device is also ideal for powering pulsed power applications. As an example, it can be used to drive high voltage pulser circuits such as air gap switches, DC/DC converters, DC/AC converters, or any other pulsed power applications. The device can also be used for high speed low noise operational amplifiers with high output current.The JAN2N3810U can also be applied in industrial control applications. Its large voltage and current capability enable it to drive high power servo motors, linear actuators and other high power devices.

Working Principle

The JAN2N3810U is an Integrated High Power Stack (IHPS) transistor array. It consists of two high gain, high speed transistors and a low capacitance input buffer, which greatly reduces response time and power dissipation. The device has a pair of high voltage transistors with a maximum collector-emitter voltage of 1.2KV. The current gain in the device is high and can handle up to 8000A of current output. The device also has a low voltage drop, which means that the device can dissipate only a small amount of power.The low capacitance input buffer of the device helps minimize switching losses and minimize the response time. The buffer also reduces the power dissipation by limiting the current spikes.The device is rated for a maximum power of 140W and the maximum operating temperature is 175°C. The device is also rated for a maximum ambient temperature of 85°C.

Conclusion

In conclusion, the JAN2N3810U is a high power Integrated High Power Stack (IHPS) transistor. It can be used in applications such as lighting, pulsed power, high voltage D/A circuits, or industrial controls. The device has two high-gain transistors and a low capacitance input buffer, which greatly reduces response time and power dissipation. With a maximum collector-emitter voltage of 1.2KV, the device is rated for a maximum power of 140W and can handle up to 8000A of current output. It is also rated for a maximum ambient temperature of 85°C and a maximum operating temperature of 175°C.

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