JAN2N3740 Allicdata Electronics
Allicdata Part #:

1086-20905-ND

Manufacturer Part#:

JAN2N3740

Price: $ 16.84
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 60V 4A TO-66
More Detail: Bipolar (BJT) Transistor PNP 60V 4A 25W Through H...
DataSheet: JAN2N3740 datasheetJAN2N3740 Datasheet/PDF
Quantity: 1000
100 +: $ 15.30480
Stock 1000Can Ship Immediately
$ 16.84
Specifications
Series: Military, MIL-PRF-19500/441
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Power - Max: 25W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)
Description

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Introduction

JAN2N3740 is a bipolar junction transistor (BJT) that can safely and reliably operate under a wide range of temperatures. It is considered to be a very reliable device due to its high junction breakdown voltage and high switching speed. JAN2N3740 is a single transistor type that is designed for use as a power switch, amplifier, or oscillator. There are two possible operating modes for the transistor: normal mode and inverse mode. In this article, we will discuss the application fields of JAN2N3740 and its working principle.

Application Fields

JAN2N3740 has a wide range of applications due to the various advantages it has. It can be used in power amplifiers, audio amplifiers, switching circuits, power supplies, and other applications that require a high switching speed. The device can also be used in semiconductor devices, such as light emitting diodes (LEDs), power transistors, and field effect transistors (FETs). It can even be used as a voltage regulator.

Due to the high junction breakdown voltage, JAN2N3740 is mainly used in applications that require high voltage levels, such as power amplifiers and power supplies. It is also utilized in circuit designs that require a high switching speed, such as switching circuits and semiconductor devices.

Working Principle

JAN2N3740 is a high speed, low power NPN bipolar junction transistor (BJT). It is composed of three main parts, the base, collector and emitter. The base is the control element of the device and is a relatively low conductivity semiconductor. The collector and emitter are at the two sides of the transistor, separated by the base. The collector is typically the more heavily doped part and has a low resistance to current flow. The emitter, on the other hand, is more lightly doped and has a high resistance to current flow.

In normal mode, the base-emitter voltage is below 0.7v. This means that the base is more negative than the emitter, resulting in a forward biasing. This forward biasing causes current to flow through the transistor, from the collector to the emitter. This current flow can be used as an amplifier or oscillator. In inverse mode, the base-emitter voltage is above 0.7V, meaning the base is more positive than the emitter, resulting in a reverse biasing. This reverse biasing causes the transistor to act as an open switch, and no current can flow through it.

Conclusion

JAN2N3740 is a single transistor type that is designed for use as a power switch, amplifier or oscillator. It is composed of three main parts, the base, collector and emitter, and has two possible operating modes, normal mode and inverse mode. The device can be used in a variety of applications due to its high junction breakdown voltage and switching speed. This article has described the application fields of JAN2N3740 and its working principle.

The specific data is subject to PDF, and the above content is for reference

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