JAN2N4150

Series:	Military, MIL-PRF-19500/394
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	70V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 1A, 10A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 5A, 5V
Power - Max:	1W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

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Introduction

The JAN2N4150 is a commonly used type of single-gated bipolar junction transistor (BJT) or bipolar transistor. Bipolar transistors are three-terminal devices which are used to control current or voltage levels in electronic circuits. The JAN2N4150 is particularly known for its high current gain and low power dissipation. This article will discuss the application fields and working principle of the JAN2N4150, as well as its various features.

Application Fields

The JAN2N4150 is a versatile transistor which can be used in a wide variety of applications, including switching circuits, amplification circuits, logic circuits, and power regulation. Due to its high current gain, the JAN2N4150 can be used for high power switching applications, such as controlling the power supply to motors and solenoids. It can also be used for switching low current loads, such as LEDs. Additionally, the JAN2N4150 can be used in low power amplifiers to amplify audio signals, or in digital circuits for logic operations and power regulation.

Features

The JAN2N4150 has many useful features, making it suitable for a wide range of applications. It has a high current gain (hFE) of 1000, which means that it can handle large currents with relatively small voltage levels. It has a low power dissipation of 2 watts, meaning that it can be operated at low power levels and will not waste energy. Additionally, it has a wide temperature range of -55 to +150 degrees Celsius, and a wide operating voltage range of -50 to +50 volts.

Working Principle

The working principle of the JAN2N4150 can be understood best by considering the device’s construction and function. The JAN2N4150 is composed of a base, a collector, and an emitter. When voltage is applied between the emitter and the collector, it creates a current path between the two electrodes. This current is then amplified by the base-collector junction, creating an amplified current at the collector (which is much higher than the voltage supplied at the emitter). This amplified current can then be used to control current levels or power levels in the electronic circuit.

Conclusion

The JAN2N4150 is a versatile single-gated BJT transistor which can be used in a wide range of applications, from high power switching and amplification circuits to low power logic operations and power regulation. It offers a high current gain, low power dissipation, a wide temperature range, and a wide operating voltage range, making it suitable for a variety of applications. Additionally, the working principle of the JAN2N4150 can be easily understood by considering its construction and function.

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