JAN2N2222AUA

Series:	Military, MIL-PRF-19500/255
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
Transistor Type:	NPN
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	500mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD

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<h2>Introduction</h2><p>JAN2N2222AUA is a SMD device specifically designed and manufactured as a bipolar junction transistor (BJT). It is a single type of BJT, which has characteristics of small size, low collector-emitter saturation voltage and excellent operating gains. Thus, it is favored and used in a variety of electronic circuits for electrical signal amplification and switching.</p><h2>JAN2N2222AUA application field</h2> <p>The JAN2N2222AUA can be used in a number of fields, due to its excellent features. Firstly, it is commonly used as buffers in communication equipment, such as audio amplifiers, pre-amplifiers, etc. Secondly, it is suitable to be employed as switching and power supply elements, like current sources and current switches. Thirdly, it can be used to construct a variety of oscillators and current regulators. Finally, it is a great choice to be used as an electrical timing device for automatic control of electronic devices.</p><h2>JAN2N2222AUA working principle</h2><p>It is a type of bipolar junction transistor (BJT) with two NPN transistors joined together. In the device, two oppositely-directed N type semiconductors are connected to a single P type semiconductor, which is called the base region, as shown in the figure below:</p><p><img src="JAN2N2222AUA_working_pic.jpg" alt="JAN2N2222AUA working principle" /></p><p>In the JAN2N2222AUA device, the two NPN transistors are wired in a way that each NPN transistor has its own separate pair of collector and emitter terminals, as well as its own base terminal. When base current is supplied, the two transistors are activated simultaneously and amplified signals are generated at the collector terminals and output. The device is usually operated with the base current between 0 &plusmn; 50 &micro;A. The gain of the device is usually in the range of 80 to 500.</p><h2>Reference</h2><p>[1] Fairchild Semiconductor. (2016). JAN2N2222AUA. Retrieved on 28th Dec 2019, from https://www.fairchildsemi.com/datasheets/JA/JAN2N2222AUA.pdf</p>

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