Allicdata Part #: | 1086-2326-ND |
Manufacturer Part#: |
JAN2N2222AUB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 50V 0.8A |
More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 500mW Surf... |
DataSheet: | JAN2N2222AUB Datasheet/PDF |
Quantity: | 1000 |
Series: | Military, MIL-PRF-19500/255 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Non-Standard |
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Introduction
The 2n2222AUB model bipolar junction transistor (BJT) is one of the most popularly used single BJT transistors in the industry today. Invented in 1944 by William Shockley, the 2n2222AUB consists of three layers of semiconductor material, sandwiched together. These 3 layers are what allow the transistor to amplify electrical signals and switch on and off from just a small input of current or voltage.
Application Field
As one of the most used BJT transistors for analog signal amplification and power switching, the 2n2222AUB finds application in a large variety of fields such as consumer electronics, industrial machinery and control systems, communications equipment, and various other electronic applications. Despite its low-power capability, the 2n2222AUB is able to support relatively high-voltage and current application. It is also able to handle a wide range of temperatures and operating ranges.
Working Principle
In order to understand the working principle of the 2n2222AUB, we must first understand the semiconductor material on which it is based. In basic terms, a semiconductor is made up of two layers of solid material, an N-type and a P-type material. N-type material is made up of many negative charge carriers, while the P-type is composed of positive charge carriers.
In between these two layers is a thin layer of N-type material; this layer serves as the transistor’s base. The other two layers, known as the emitter and collector, are made up of P-type material. The base, emitter, and collector contact each other to form the 2n2222AUB transistor. When an input voltage or current is applied to the base terminal, the transistor starts conducting electric current between the emitter and collector. When the input voltage or current is removed, the transistor stops conducting electric current. This is the basic working principle of the 2n2222AUB.
The output current is regulated by the size of the base current; the larger the base current, the greater the output current. The output voltage is dependent on the input voltage applied to the base terminal; this is known as the transistor’s common-emitter voltage gain. The output power is regulated by the input current and the transistor’s current gain.
Conclusion
The 2n2222AUB is one of the most popular transistor models used in modern electronics. Its application covers a wide range of fields, and its working principle is based on simple semiconductor materials and input control.
The specific data is subject to PDF, and the above content is for reference
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