JAN2N2328 Allicdata Electronics
Allicdata Part #:

1086-20710-ND

Manufacturer Part#:

JAN2N2328

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE SILICON CTRL TO-5
More Detail: SCR 300V Sensitive Gate Through Hole TO-5
DataSheet: JAN2N2328 datasheetJAN2N2328 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/276
Packaging: Bulk 
Part Status: Obsolete
Voltage - Off State: 300V
Voltage - Gate Trigger (Vgt) (Max): 800mV
Current - Gate Trigger (Igt) (Max): 200µA
Current - On State (It (AV)) (Max): 220mA
Current - Hold (Ih) (Max): 2mA
Current - Non Rep. Surge 50, 60Hz (Itsm): --
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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Thyristors are semiconductor components that are mainly employed in the field of electrical engineering. They can carry out a variety of functions such as the regulation of electrical current and the conversion of DC current to AC current, among others. There are three major types of thyristors: the silicon controlled rectifier (SCR), the gate turn off thyristor (GTO), and the static induction thyristor (SITh). Today, we will be focusing our attention on the SCR type thyristor, with a specific look at the JAN2N2328 type.

The JAN2N2328 type SCR is a robust device that has a power capacity of up to 400W and a wide operating temperature range from -65°C to + 200°C. It is also capable of withstanding voltages up to 200V and has a high surge current rating of 8A. This SCR is used primarily in applications that require repetitive and high-speed switching, such as motor speed control circuits and relay contactors. It also has applications in integrated logic circuits, AC/DC conversion and electrical power systems.

The working principle of the JAN2N2328 type SCR is simple. It consists of four P-N junctions joined together to form a four-layer semiconductor structure. The four P-N junctions are arranged in an "H" shape, which is the reason why it is also called a four-layer diode. When +V is applied to the gate, the SCR will be triggered, allowing a flow of current through the SCR structure. To deactivate the SCR, a negative voltage must be applied to the gate.

In conclusion, the JAN2N2328 is a robust SCR whose versatile applications meet the needs of many electronic applications. Its wide operating temperature range, high surge current, and 400W power capacity make it a reliable and convenient choice for a variety of applications. Its simple working principle of applying +V to the gate to trigger it and applying negative voltage to deactivate it makes it easy to understand and use.

The specific data is subject to PDF, and the above content is for reference

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