JAN2N2605

Series:	Military, MIL-PRF-19500/354
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	30mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Power - Max:	400mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AB, TO-46-3 Metal Can
Supplier Device Package:	TO-46-3

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Introduction to JAN2N2605

The JAN2N2605 is a medium power silicon NPN transistor in a TO-18 package. It is designed for low frequency amplifier, high voltage switching, and pre-amp applications. This device is a collector-base version of the popular NPN 2N3904 transistor. It has a high current gain and excellent temperature stability, making it an ideal choice for many audio and RF projects.

Applications of JAN2N2605

The JAN2N2605 is an ideal choice for low frequency amplifier applications. It has a high current gain (hFE of 150-500) which makes it suitable for powering low voltage circuits. It is also used in RF amplifiers, video amplifiers, and professional audio amplifiers. It can also be used as an audio pre-amp or power amplifier.In addition, the JAN2N2605 is well-suited for high voltage switching. This is due to its high breakdown voltage (BVce of 40V), low saturation voltage (Vce(sat) of 0.2V) and fast switching speed (fT of 400MHz). It is often used to switch high power circuits and for controlling high voltage relays.

Working Principle of JAN2N2605

The JAN2N2605 is a silicon NPN bipolar junction transistor (BJT). BJTs are three-terminal devices made up of two p-type semiconductors (the base and collector) and one n-type semiconductor (the emitter). In the JAN2N2605, the base is connected to the emitter and the collector is connected to the emitter. The JAN2N2605 operates by the “common emitter configuration”, in which the current flowing through the base of the transistor controls the current flowing through the collector. When a forward bias voltage is applied to the base of the transistor, a current flows through the base, which causes a current gain “hFE” to occur in the collector. This is known as “amplification” and is the principle behind how the transistor amplifies a signal.

Conclusion

The JAN2N2605 is a medium power silicon NPN bipolar junction transistor. It has a high current gain, excellent temperature stability, and relatively low saturation voltage. This makes it an ideal choice for low-frequency amplifiers, high-voltage switching, and audio pre-amps. Its working principle is based on the “common emitter configuration”, where a current flows through the base of the transistor to control the current flowing through the collector.

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