Allicdata Part #: | 1086-20781-ND |
Manufacturer Part#: |
JAN2N3055 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 70V 15A TO-3 |
More Detail: | Bipolar (BJT) Transistor NPN 70V 15A 6W Through H... |
DataSheet: | JAN2N3055 Datasheet/PDF |
Quantity: | 1000 |
Series: | Military, MIL-PRF-19500/407 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 70V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 6W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3 |
Supplier Device Package: | TO-3 (TO-204AA) |
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The JAN2N3055 is an NPN switching transistor that is commonly used in push-pull circuits and general switching applications. It has a lower collector-emitter voltage drop than other similar transistors and is suitable for higher-frequency switching. There are several options available for mounting, including through-hole and surface mount packages.
The JAN2N3055 is a general-purpose, NPN, low-current, low-voltage, switching transistor for industrial applications. The transistor can be used in both single-ended or push-pull circuits where voltage drops or switching times need to be reduced. It has a wide current gain range and low saturation voltage, making it ideal for high-frequency switching applications.
The device is manufactured with Epitaxial Base technology. This process provides a deep vertical base profile and a narrow base profile. The deeply-etched base profile has enhanced temperature compensation that reduces gain variations across temperature which is beneficial for reliable operation at different temperatures. It also helps minimize switch on-time variations, making it suitable for high-speed switching applications.
The main advantage of this transistor is its low turn-off voltage. This reduces the power dissipation of the device, improving its efficiency. Additionally, the JAN2N3055 uses a wide current gain range which makes it ideal for high-frequency switching and low-voltage applications.
The JAN2N3055 has a breakdown voltage of about 60V and an Ic max collector current of about 500 mA. The transistor is compatible with a wide range of drives, from logic to TTL, CMOS, and computers. Furthermore, the JAN2N3055 is available in both through-hole and surface mount packages, offering flexibility and convenience when mounting the device in different applications.
The working principle of a JAN2N3055 transistor is similar to that of other transistors. When a small current is applied at the base terminal, of the transistor, a larger current is allowed to flow through the collector and emitter terminals. This larger current then enables the transistor to open or close a switch depending on the voltage applied. The transistor can be used as an amplifier, oscillator, or even a buffer.
To summarize, the JAN2N3055 is an NPN switching transistor highly suitable for applications that require low voltage drops, fast switching times, and low power dissipation. This device is available in both through-hole and surface mount packages that make it easier to install in various applications. Its low turn-off voltage, wide current gain range, and low saturation voltage make it suitable for high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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JAN2N6796 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
JAN2N6796U | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 18-LCCN-Chann... |
JAN2N6798 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH TO-205AF TO-3... |
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