JAN2N3055 Allicdata Electronics
Allicdata Part #:

1086-20781-ND

Manufacturer Part#:

JAN2N3055

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 70V 15A TO-3
More Detail: Bipolar (BJT) Transistor NPN 70V 15A 6W Through H...
DataSheet: JAN2N3055 datasheetJAN2N3055 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Military, MIL-PRF-19500/407
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 6W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3
Supplier Device Package: TO-3 (TO-204AA)
Description

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The JAN2N3055 is an NPN switching transistor that is commonly used in push-pull circuits and general switching applications. It has a lower collector-emitter voltage drop than other similar transistors and is suitable for higher-frequency switching. There are several options available for mounting, including through-hole and surface mount packages.

The JAN2N3055 is a general-purpose, NPN, low-current, low-voltage, switching transistor for industrial applications. The transistor can be used in both single-ended or push-pull circuits where voltage drops or switching times need to be reduced. It has a wide current gain range and low saturation voltage, making it ideal for high-frequency switching applications.

The device is manufactured with Epitaxial Base technology. This process provides a deep vertical base profile and a narrow base profile. The deeply-etched base profile has enhanced temperature compensation that reduces gain variations across temperature which is beneficial for reliable operation at different temperatures. It also helps minimize switch on-time variations, making it suitable for high-speed switching applications.

The main advantage of this transistor is its low turn-off voltage. This reduces the power dissipation of the device, improving its efficiency. Additionally, the JAN2N3055 uses a wide current gain range which makes it ideal for high-frequency switching and low-voltage applications.

The JAN2N3055 has a breakdown voltage of about 60V and an Ic max collector current of about 500 mA. The transistor is compatible with a wide range of drives, from logic to TTL, CMOS, and computers. Furthermore, the JAN2N3055 is available in both through-hole and surface mount packages, offering flexibility and convenience when mounting the device in different applications.

The working principle of a JAN2N3055 transistor is similar to that of other transistors. When a small current is applied at the base terminal, of the transistor, a larger current is allowed to flow through the collector and emitter terminals. This larger current then enables the transistor to open or close a switch depending on the voltage applied. The transistor can be used as an amplifier, oscillator, or even a buffer.

To summarize, the JAN2N3055 is an NPN switching transistor highly suitable for applications that require low voltage drops, fast switching times, and low power dissipation. This device is available in both through-hole and surface mount packages that make it easier to install in various applications. Its low turn-off voltage, wide current gain range, and low saturation voltage make it suitable for high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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