| Allicdata Part #: | 1086-20847-ND |
| Manufacturer Part#: |
JAN2N3507 |
| Price: | $ 11.92 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 50V 3A TO39 |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 3A 1W Through Ho... |
| DataSheet: | JAN2N3507 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 10.83850 |
| Series: | Military, MIL-PRF-19500/349 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 250mA, 2.5A |
| Current - Collector Cutoff (Max): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 1.5A, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package: | TO-39 (TO-205AD) |
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The JAN2N3507 is a bipolar junction transistor (BJT) designed for use in applications requiring higher power than the JAN2N3904 but with lower Pd than the JAN2N3725 and 2N3760. It is one of the most widely used transistors among hobbyists, due to its low cost and easy availability. It is used for general purpose switching and amplification of signal.
The base–emitter voltage (VBE) of the JAN2N3507 is 65 volts, and its collector–emitter voltage (VCE) is 60 volts. Its maximum power dissipation is 7 watts, with a collector current rating of 1.5 amperes. It is a single-pole, single-throw (SPST) switch with an on-voltage drop of 0.7V.
The working principle of the JAN2N3507 is based on the concept of a transistor. A transistor acts as a switch or amplifier for electricity. It controls the flow of electricity through a circuit by varying the strength of the electrical signal that it provides. A bipolar junction transistor has three main parts: a base, a collector, and an emitter. The base terminal is used to control the flow of current to the collector and emitter; when the base is activated, current can flow from the collector to the emitter. The collector and emitter of the JAN2N3507 have a high current gain, meaning that a small change in the base voltage can result in a large change in the collector-emitter voltage.
The JAN2N3507 can be used in a number of applications, including microphone pre-amplification, audio power amplifier, RF power amplifiers, power switching, relay drivers, and logic drivers, among others. It is also used in industrial and automotive systems, such as in electric fan motors, car headlights and power generators. The low on-voltage drop makes it suitable for use in power supplies and voltage regulators.
The JAN2N3507 is also commonly used in circuits which require fast switching, such as in pulse-width modulation circuits. This is because the base-emitter voltage of the JAN2N3507 is low, meaning that the transistor can be switched on and off quickly when the base voltage is varied. This is ideal for applications where high speed is required.
The JAN2N3507 is also capable of providing amplification for low-level signals. It can be used in amplifier circuits as an amplifying element, because it has a high current gain. This makes it useful for amplifying signals from microphones or other low-level sources.
The JAN2N3507 is an excellent choice for applications requiring a low cost, low-voltage switch, or fast switching capability. Its low on-voltage drop and high current gain make it an ideal choice for applications requiring high power or signal amplification.
The specific data is subject to PDF, and the above content is for reference
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JAN2N3507 Datasheet/PDF