JAN2N3635 Allicdata Electronics
Allicdata Part #:

1086-20868-ND

Manufacturer Part#:

JAN2N3635

Price: $ 12.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 140V 1A
More Detail: Bipolar (BJT) Transistor PNP 140V 1A 1W Through H...
DataSheet: JAN2N3635 datasheetJAN2N3635 Datasheet/PDF
Quantity: 1000
100 +: $ 11.69890
Stock 1000Can Ship Immediately
$ 12.87
Specifications
Series: Military, MIL-PRF-19500/357
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Description

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The JAN2N3635 single bipolar junction transistor is a small signal device intended for general switching and amplification purposes. It is one of the most widely used transistors due to its versatility, high performance, and reliable operation. The JAN2N3635 is available in both plastic and metal packages, making it suitable for a wide variety of applications.

The JAN2N3635 is a NPN type transistor, meaning it has three layers of semiconductor material - an N-type base, a P-type emitter, and a P-type collector. A small amount of current in the base moves a larger current from the collector to the emitter. This is called bipolar operation, because the current is carried by both electrons and holes. The basic principle of operation is that when the base terminal is forward biased, electrons and holes are injected into the emitter-base junction, and the device can conduct current.

The JAN2N3635 is widely used in general switching and amplification applications, such as in audio amplifiers, oscillators, and RF amplifiers. It is also used in radio and television circuits to provide power amplification and switching. In switching applications, the transistor can be used to turn a device on or off, while in an amplifier application, the transistor can be used to increase the gain of a signal.

The unique characteristics of the JAN2N3635 make it attractive for all types of circuit applications. It has a low input capacitance and low power consumption, making it ideal for low power applications. It also has good isolation performance, which is useful for RF applications, and its high breakdown voltage makes it suitable for high voltage applications. The device also has a high switching speed and high current gain, making it suitable for high-performance applications.

In addition to its features and performance, the JAN2N3635 has a wide range of ratings and packages available. It is available in both metal and plastic packages, with ratings ranging from 500mW to 3A. This allows users to choose the best device for their application. The device is also relatively inexpensive to produce, making it an economical choice for many applications.

The JAN2N3635 single bipolar junction transistor is an excellent choice for both general switching and amplification applications. Its versatile performance and reliable operation make it a popular choice for a wide variety of circuits. In addition, the device is available in both metal and plastic packages and has a wide range of ratings and packages available, making it ideal for just about every application.

The specific data is subject to PDF, and the above content is for reference

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