JAN2N3737UB Allicdata Electronics
Allicdata Part #:

1086-2356-ND

Manufacturer Part#:

JAN2N3737UB

Price: $ 14.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 40V 1.5A 3 PIN
More Detail: Bipolar (BJT) Transistor NPN 40V 1.5A 500mW Surfa...
DataSheet: JAN2N3737UB datasheetJAN2N3737UB Datasheet/PDF
Quantity: 1000
100 +: $ 13.56480
Stock 1000Can Ship Immediately
$ 14.92
Specifications
Series: Military, MIL-PRF-19500/395
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (2.9x2.2)
Description

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The JAN 2N3737UB is an NPN bipolar junction transistor designed for general purpose and high power industrial applications. It belongs to the single transistor family that is commonly used to construct and regulate voltage, current and power in an electronic circuit. The JAN 2N3737UB is a direct substitution for commonly-used 2N3761X and 2N3762X transistors, offering an up to 50% increase in power dissipation and up to 80% reduction in collector-emitter saturation voltage.

The JAN 2N3737UB features a full-frequency range to 1GHz and is available in both through-hole and surface-mount packages. It also has a wide range of operating temperature characteristics from -55°C to +150°C. The 2N3737UB has a low collector-emitter leakage current, which can be used for reliable performance in high-temperature circuits. The JAN 2N3737UB offers excellent ruggedness and noise immunity over a wide range of voltage levels and temperatures, making it suitable for use in both low power and high-reliability applications.

The working principle of the JAN 2N3737UB is simple enough to understand. A voltage is applied to the transistor\'s base, which games the transistor\'s conductivity. This changes the current that flows through the collector and emitter terminals, creating a control mechanism. The control mechanism is used to regulate the voltage and current of the circuit it is part of. This allows the transistor to amplify, switch, or otherwise control the output signals and current.

The JAN 2N3737UB is commonly used in a variety of applications, such as: audio amplifiers, motor controls, DC-DC converters, switching power supplies, computer systems, telecommunications, power controllers and instrumentation. The JAN 2N3737UB is an excellent choice for high power applications due to its high power dissipation and its low collector-emitter saturation voltage. It\'s also ideal for use in high-temperature and high-reliability applications due to its ruggedness and noise immunity over a wide range of voltage levels and temperatures.

The JAN 2N3737UB is a great choice for most power regulating and control applications. Its ruggedness and noise immunity make it suitable for many high-performing, high-temperature industrial applications. It also offers a large power dissipation and a low collector-emitter saturation voltage, making it suitable for switching power supplies, motor controls, audio amplifiers and other power applications. The JAN 2N3737UB is a reliable choice for most power-regulating needs.

The specific data is subject to PDF, and the above content is for reference

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