
Allicdata Part #: | 1086-20915-ND |
Manufacturer Part#: |
JAN2N3767 |
Price: | $ 24.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 80V 4A |
More Detail: | Bipolar (BJT) Transistor NPN 80V 4A 25W Surface M... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 22.32180 |
Series: | Military, MIL-PRF-19500/518 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 100mA, 1A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 5V |
Power - Max: | 25W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-213AA, TO-66-2 |
Supplier Device Package: | TO-66 (TO-213AA) |
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The JAN2N3767 is a transistor, specifically a single bipolar junction transistor (BJT). As with all electronic devices, BJTs have an application field and a working principle. This article explains both in detail.
Application field of the JAN2N3767
The JAN2N3767 has a range of application fields. The device is primarily used in switching and amplification circuits, as it is able to control a large current flow with a small base current injection. It can also be used in logic circuits and other digital and audio applications. Additionally, it is used in power supplies and amplifiers, as well as low-noise oscillator circuits.
The JAN2N3767can also be used as an input buffer in pulse triggering and voltage level shifting circuits. It can also be used in analog multipliers, detector and mixer circuits. Finally, the device is capable of responding to a wide range of operating frequencies, making it suitable for high-speed logic circuits.
Due to its wide range of applications, the JAN2N3767is widely used as a general-purpose transistor for a variety of applications.
Working Principle of the JAN2N3767
The JAN2N3767is a three-terminal device that consists of two p-type and one n-type semiconductor regions. It has two junctions formed between the two p-type regions and the n-type region. This junction is the transistor’s base-emitter junction. The third terminal is the collector, which is the most important terminal.
When a voltage is applied to the base-emitter junction, current flows primarily through the base-collector junction. This generates collector current, which can be used to control the output current of a circuit. It works in the same way as a voltage-controlled switch.
The base-collector junction is reverse biased. This causes it to have a high resistance, which in turn prevents the current from flowing through it. However, when a voltage is applied to the base-emitter junction, current is generated, which flows through the base-collector junction, thus reducing its resistance and allowing the current to flow more easily. This is the basic principle of the transistor.
The JAN2N3767is a NPN type of transistor, which means that it has two p-type and one n-type semiconductor regions. This type of transistor is capable of providing a high current gain. It has a maximum current gain of 200, which is much higher than the current gain of an ordinary transistor.
The JAN2N3767 is also capable of switching at high speeds. Its switching time is typically between 10uS and 20uS, making it suitable for applications where fast response times are required.
Conclusion
The JAN2N3767 is a single bipolar junction transistor (BJT). It has a range of applications in switching and amplification circuits, logic circuits, power supplies and amplifiers, low-noise oscillator circuits, input buffers, analog multipliers, and detector and mixer circuits. It has a maximum current gain of 200, and it is capable of switching at high speeds. Ultimately, the JAN2N3767 is a versatile device that is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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