JAN2N3791

Series:	Military, MIL-PRF-19500/379
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 2A, 10A
Current - Collector Cutoff (Max):	5mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 3A, 2V
Power - Max:	5W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3
Supplier Device Package:	TO-3 (TO-204AA)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JAN2N3791 is a high power transistor device produced by several different manufacturers, constructed in a PNP single transistor configuration. It is a common part used in many different applications.The JAN2N3791 consists of three terminals, an emitter, base, and collector. The emitter is the connection point to a power source and the base is the input signal connection point. Through the input signal the collector output is produced.The common uses for JAN2N3791 transistors include high-amplifier circuits, high-power switching, low-level drives and low noise pre-amplifier circuits. It is capable of working as both a switch as well as an amplifier. When used as a switching device, it is capable of switching extreme signal frequencies and currents. The JAN2N3791 can also withstand high voltage pulse surges.The JAN2N3791 works on the principle of an insulated gate field effect transistor (IGFET). This transistor consists of two drain terminals and one gate terminal. The resistance between the gate and drain terminals is controlled by voltage applied to the gate. As the voltage increases, the device conducts more current.When used as an amplifier, the JAN2N3791 amplifies the incoming signal. As the current in the base increases, the current in the collector increases by a factor of hfe, which is determined by the device\'s characteristics.The JAN2N3791 is uniquely suited to a variety of different applications that require high power and low noise. Some of these applications include DC motor control, switching amplifiers, audio amplifiers and servo motor control. It is also used in high current and high-frequency switching, as well as high-voltage pulse circuits.In summary, the JAN2N3791 is a high power transistor constructed in a PNP single transistor configuration. It is frequently used for high-amplifier circuits, high-power switching, low-level drives, low noise pre-amplifier circuits and other high current and high-frequency switching applications. The device uses the IGFET principle to control the current flow an amplify incoming signals.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description