
Allicdata Part #: | 1086-2359-ND |
Manufacturer Part#: |
JAN2N3811 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS 2PNP 60V 0.05A TO78 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/336 |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1mA, 5V |
Power - Max: | 350mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-78-6 Metal Can |
Supplier Device Package: | TO-78-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
JAN2N3811 is a type of transistor array, also known as bipolar junction transistor (BJT). Generally, it is a three-pole transistor in which two p-type and one n-type semiconductor material is used. This construction is beneficial as it reduces the possibility of cross-talk between the transistors and allows multiple transistors to be incorporated into a single, smaller unit. The main benefit of using such an array is that it allows for less wiring, thus decreasing the production cost.
When it comes to JAN2N3811\'s application field, there are many varied possibilities. It is primarily used in telecommunication fields, such as the mobile phone industry or radio towers. It is also used in automotive electronics, particularly in the design of control systems. Moreover, it has a broad range of applications in other electronics, ranging from medical equipment to industrial components.
When it comes to the working principle of JAN2N3811, it can be explained in simple terms. Basically, it takes the current and voltage present across different pins and outputs specific values based on the circuit design. The current and voltage can depend on external factors such as temperature and humidity, and the JAN2N3811 will use these values to modify the output according to the design in the circuit.
The transistor array design of JAN2N3811 is beneficial not just because of its multiple transistors but also because of the low voltage and low current requirements. It requires very little power to operate and can be used in applications where low voltage and low current is necessary. This is especially important for medical or industrial applications where efficient power usage is highly valued.
In conclusion, JAN2N3811 is a type of transistor array that combines multiple transistors into one compact unit, making it highly suitable for telecommunication, automotive and other electronics applications. Its low voltage and low current requirement also make it ideal for applications where efficient power usage is important. Its working principle is based on determining the current and voltage present in the pins and outputs specific values according to the circuit design.
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