JAN2N3868S Allicdata Electronics
Allicdata Part #:

1086-20929-ND

Manufacturer Part#:

JAN2N3868S

Price: $ 22.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 60V 0.003A TO39
More Detail: Bipolar (BJT) Transistor PNP 60V 3mA 1W Through H...
DataSheet: JAN2N3868S datasheetJAN2N3868S Datasheet/PDF
Quantity: 1000
100 +: $ 20.59330
Stock 1000Can Ship Immediately
$ 22.65
Specifications
Series: Military, MIL-PRF-19500/350
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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JAN2N3868S is a bipolar junction transistor (BJT), a three-terminal device used as a switch or amplifier in electronic circuits. It is a low-cost, high-power NPN device with wide bandgap semiconductors. Its operating temperature range is from -55°C to +150°C.

The JAN2N3868S has an identical pinout to the generic 2N3865 and 2N3904 transistors for easy replacement. This transistor features good hFE linearity, fast switching speed, low on-state voltage drop, and a high current carrying capacity. The name "JAN2N3868S" is the National Semiconductor part number of the transistor.

The Principle of JAN2N3868S

The JAN2N3868S consists of two P-type or lightly doped semiconductor layers sandwiched between two N-type or heavily doped semiconductor layers. A P-N junction is formed between the P-type and N-type layers. When a voltage is applied to the base of the transistor, it creates an electric field within the transistor. This electric field causes a current flow between the collector and the emitter terminal, allowing the transistor to act as a switch or amplifier in an electronic circuit. The gain of the transistor is determined by the current ratio from input to output.

Application areas of JAN2N3868S

The JAN2N3868S can be used in a wide range of applications, including amplification and switching circuits. The high current carrying capacity of the JAN2N3868S makes it well suited for high power circuits. It can be used in linear or switching power supplies, amplifiers, motor control circuits, thyristor drivers, and relay drivers. It is also useful in automotive and medical applications such as DC-DC converters, motor drivers and start-stop systems.

The JAN2N3868S is also useful in audio amplifier applications, particularly as a push-pull amplifier. Push-pull amplifiers are typically bi-polar devices, meaning they must operate in both forward and reverse direction. This makes them well-suited for audio applications, where they can provide low distortion and high power transients. The JAN2N3868S has wide bandgap semiconductors and low on-state voltage drop, which makes it well-suited for audio amplifier applications.

In addition, the JAN2N3868S can also be used in analog circuits, like oscillators, mixers and voltage regulators. The high current carrying capacity of these transistors makes them ideal for controlling multiple loads. The JAN2N3868S is also often used in linear power amplifiers, where it can provide high power and low distortion.

Conclusion

The JAN2N3868S is a low-cost, high-power NPN transistor with wide bandgap semiconductors and good hFE linearity. It is versatile for a wide range of applications, including amplification and switching circuits, audio amplifiers, analog circuits, linear power amplifiers and more. Its fast switching speeds, high current carrying capacity and low on-state voltage drop make it ideal for various applications.

The specific data is subject to PDF, and the above content is for reference

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