JAN2N3902

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JAN2N3902 is a Silicon NPN BJT (Bipolar Junction Transistor) designed for general-purpose amplifier and low power switching applications. JAN2N3902 is made in a very small SOT-23-3 (Super Small Outline Transistor) package and provides high gain and low saturation voltage. It is available in 8 pin mini-flat leaded package and used in many consumer and industrial applications.

This transistor has a common emitter configuration which serves as the input stage of an amplifier. It has the ability to offer current gain (hFE) from 70 to 200 that enables the transistor to drive large currents with just small input signals. This implies this transistor can be used as a switch when interfaced with digital logic. It contains a collector, base, and an emitter as its three terminal pins.

The JAN2N3902 draws a relatively small current (Ic. max: 100 mA) and is optimized for standard logic supply voltage ranges i.e. the low-voltage power supply range 2.7V-5.5V which is really useful for low-power digital controller applications. This ensures ultimate power savings while providing a high-output current that can still drive peripheral ICs.

Capacitance values of the JAN2N3902 are closely controlled such that it is analyzed with low-frequency small signal frequency performance as well. This implies the transistor offers superior levels even when operating at low frequencies. The JAN2N3902 has the ability to switch in picoseconds, making it perfect for very high-speed applications where high-frequency responses are required right up to 1.2GHz.

The JAN2N3902 has a voltage rating of 30 V and a maximum IC of 100 mA. Its current gain (hFE) is from 70 to 200 which makes it a great choice for amplifying small signals and controlling high-power devices. The maximum power dissipation (PD) this transistor can handle is 500mW. Active mode can be used for a wide range of digital circuits ranging from slow switching to high-speed switching.

The JAN2N3902 exhibits good frequency response and power efficiency. It has a high transition frequency (fT) of 1-2 GHz and wide bandwidth of 200MHz. The useful power range is 1-2MHz and its collector-to-emitter breakdown voltage (BVceo) is also high at 30V. And the typical output capacitance (Cob) and collector-to-base capacitance (Ccbo) ranges from 3-20 pF respectively.

JAN2N3902 can operate at temperatures range from -55°C to 125°C, enabling it to operate in adverse environmental conditions. Furthermore, this transistor has the ability to work with high voltages and large currents, making it suitable for a variety of general-purpose switching and amplifying applications.

In conclusion, the JAN2N3902 is a high-performance Silicon NPN BJT with a wide range of applications. It offers superior performance even when operating at low frequencies due to its closely controlled capacitance values. It can handle a wide range of digital circuit requirements ranging from slow to high-speed switching. Furthermore, its small size and high current handling capability are just a few of the features that make this device ideal for many consumer and industrial applications.

The specific data is subject to PDF, and the above content is for reference