Allicdata Part #: | 1086-20941-ND |
Manufacturer Part#: |
JAN2N3960UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 12V UB |
More Detail: | Bipolar (BJT) Transistor NPN 12V 400mW Surface M... |
DataSheet: | JAN2N3960UB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/399 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 1V |
Power - Max: | 400mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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The JAN2N3960UB is a bipolar junction transistor (BJT) that is part of the single transistor family. It is commonly used in industrial and consumer applications, as well as in other electronic circuits. The device is a popular choice because of its low collector-emitter saturation voltage, high frequency, and low noise.
This device is a unipolar junction transistor (UJT) which has two electrodes that are separated by a thin barium oxide layer. These two electrodes relate currents differently to the applied voltage. When a voltage is applied to the base and emitter, it creates a current flow between the two electrodes, which is then translated into the output current of the device. This current is driven by the base current, which is generated from the application of a voltage source across the two semiconductor-junction terminals. Since the input current is limited, the output current is dependent upon the magnitude of the voltage applied to the terminals.
In many applications, the JAN2N3960UB is used as a voltage-controlled current source or an amplifier. It can also be used as a switch or an oscillator depending on the design parameters. The current through the device can be varied based on the voltage applied to the base and emitter terminals. Additionally, these terminals have an open-active state—meaning that they are usually non-conductive until a voltage is applied to them.
The device is characterized by its low collector-emitter saturation voltage, which is typically 0.3V. This low saturation voltage allows for lower power dissipation, which helps reduce heat, noise, and other related issues in the application. It also provides a high maximum frequency rating of nearly 1GHz, making it suitable for use in many high-speed circuits. In addition, the device is known for having a low noise figure, making it an attractive choice for many applications.
The JAN2N3960UB is an integrated circuit (IC) component, so it does not require a heatsink or other advanced cooling methods. Additionally, it is designed to tolerate high currents, temperatures up to 200°C, and pressures up to 1000 psi. The device also has a wide operating temperature range, allowing it to be used in many different types of environments.
Overall, the JAN2N3960UB is a popular single transistor component used in many electrical and electronic circuits. Its low collector-emitter saturation voltage, high frequency, and low noise make it a suitable choice for applications where accuracy and reliability are important. Additionally, its low power dissipation, high currents, and wide operating temperature range make it ideal for many applications, from consumer applications to industrial applications.
The specific data is subject to PDF, and the above content is for reference
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