JAN2N3998 Allicdata Electronics
Allicdata Part #:

1086-20949-ND

Manufacturer Part#:

JAN2N3998

Price: $ 97.94
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 80V 10A TO59
More Detail: Bipolar (BJT) Transistor NPN 80V 10A 2W Stud Moun...
DataSheet: JAN2N3998 datasheetJAN2N3998 Datasheet/PDF
Quantity: 1000
100 +: $ 89.03510
Stock 1000Can Ship Immediately
$ 97.94
Specifications
Series: Military, MIL-PRF-19500/374
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59
Description

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The JAN2N3998 is an NPN-type transistor designed to provide decreased power dissipation, improved frequency response, and increased gain. It is often used in signal processing applications, such as amplifiers, speakers, and oscillators. This transistor is a bipolar junction transistor, or BJT, which is a type of current-controlled device. The specific type of BJT is a single transistors, which means that there is only one PN junction.

The working principle of a single transistor can be explained by considering the flow of electrons and holes, which are the carriers of energy and charge. In a BJT, the emitter is connected to the base, and the base is connected to the collector. When an electric current is applied to the transistor, the electrons flow from the emitter to the base, and the holes flow from the base to the collector. This creates an electric field in the region between the emitter and collector. This field attracts additional carriers from the base, thereby increasing the current flowing through the transistor.

The current produced by the transistor is controlled by the base current. This means that the base current can be used to control the output current of the device, which is why the BJT is referred to as a current-controlled device. Thus, when the base current increases, the output current also increases. Likewise, when the base current decreases, the output current decreases.

The JAN2N3998 has several features that make it well-suited to a variety of applications. For one, it is designed to have a higher frequency response than other BJTs, due to its small geometry. Additionally, its reduced capacitance ensures that it can operate at high frequencies. This makes it ideal for amplifying high-frequency signals such as audio equipment.

The JAN2N3998 also features a low noise level, which is important in applications where low-level signals need to be amplified. Furthermore, its gain levels are high, meaning that it can produce a higher output current than other BJTs. Finally, it has a low power dissipation rating, which eliminates the need for heat sinks.

In summary, the JAN2N3998 is a single transistor type of bipolar junction transistor (BJT). It is designed to provide decreased power dissipation, improved frequency response, and increased gain. It is well-suited to applications such as audio equipment and other signal processing circuits, due to its high frequency response, low noise level, high gain, and low power dissipation.

The specific data is subject to PDF, and the above content is for reference

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