JAN2N4449

Series:	Military, MIL-PRF-19500/317
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	400nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 100mA, 1V
Power - Max:	360mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AB, TO-46-3 Metal Can
Supplier Device Package:	TO-46 (TO-206AB)

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Introduction to JAN2N4449 Transistor

The JAN2N4449 is a three-terminal series device that is often applied in switching and control circuits. It is a medium power-level general use NPN transistor with a medium current gain of approximately 150. It is designed to feature a good current gain over a wide range of collector currents, those up to 200 mA.

Features of the JAN2N4449

The JAN2N4449 transistor has a variety of features that make it an attractive component. It offers high gain and low voltage drop, low VCE(sat) and low leakage current, good temperature stability, and large current handling capacity (up to 200 mA). It is also quite robust, so it can be expected to have reliable performance in demanding environments.

Application field of the JAN2N4449 transistor

The JAN2N4449 transistor is widely used in a variety of industrial applications, such as in radio transmitters, railway signaling systems, automotive, and industrial control systems. In automotive and control systems, the transistor is used for switching and current control in power supplies, current sensing, and many other applications. The JAN2N4449 can also be used in logic circuits for level shifting and in other applications requiring a low VCE(sat) and low leakage current.The versatility of the JAN2N4449 transistor makes it ideal for use in a wide array of applications, including AC switching, audio and RF circuits, instrumentation, amplifier circuits, and microprocessor and logic circuits.

Working principle of the JAN2N4449

The JAN2N4449 transistor is an NPN-type bipolar junction transistor (BJT). As such, it has three terminals: the emitter, the collector, and the base. The transistor works by amplifying the input voltage applied to the base, and the current flowing through it is regulated based on the resistance between the base and the collector.When the voltage applied to the base is increased, the current passing through the circuit increases, and this current is amplified in the collector-emitter circuit. The current gain of the JAN2N4449 is approximately 150, meaning that it will amplify the incoming signal by a factor of 150.The JAN2N4449 has a maximum operating temperature of up to 125°C. Above this temperature, it is prone to thermal damage, which could cause it to malfunction. The transistor also has a large current-handling capacity, up to 200 mA, which means it can be used in applications requiring more power than other transistors. The JAN2N4449 is also designed to feature a low voltage drop, so it can operate at lower voltages and still provide good performance. It also has good temperature stability, so it can be used in higher temperature environments without overheating.

Conclusion

The JAN2N4449 is a versatile NPN-type bipolar junction transistor (BJT) with a wide variety of applications. It features a high current gain of approximately 150, low voltage drop, good temperature stability, and large current-handling capacity up to 200 mA. The JAN2N4449 is used in a variety of industrial applications, such as radio transmitters, railway signaling systems, automotive, and industrial control systems. It is also commonly used in amplifier circuits and logic circuits for level shifting.

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