| Allicdata Part #: | 1086-21014-ND |
| Manufacturer Part#: |
JAN2N5152 |
| Price: | $ 13.35 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 80V 2A TO39 |
| More Detail: | Bipolar (BJT) Transistor NPN 80V 2A 1W Through Ho... |
| DataSheet: | JAN2N5152 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 12.13180 |
| Series: | Military, MIL-PRF-19500/544 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max): | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 2.5A, 5V |
| Power - Max: | 1W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package: | TO-39 (TO-205AD) |
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The JAN2N5152 is a type of bipolar junction transistor. It is a low-power NPN silicon switching transistor with a moderate current gain, low leakage current, and good switching speed. This device is typically used in clock generators, oscillators, and sample and hold circuits. It is the most commonly used NPN silicon switching transistor.
A bipolar junction transistor, or BJT, is a type of electronic component that is made of a doped semiconductor material. It is composed of two p-type semiconductor materials separated by a thin n-type material. The materials control the current flow between the two materials, creating a current-carrying junction. BJTs are widely used in a variety of electronic circuits, from simple amplifying circuits to large industrial control systems.
The JAN2N5152 consists of three layers of semiconductor material, namely the Collector (C), the Base (B), and the Emitter (E). The Base layer is a thin layer of lightly doped semiconductor material sandwiched between the two thicker layers of heavily doped semiconductor material, acting as the N-type and P-type regions. When a small current passes through the Base region, it turns on the transistor and allows current to flow between the Collector and Emitter regions.
The JAN2N5152 works in the same way as a standard BJT, but with reduced power requirements. It is designed to switch faster and consume less power than other BJTs, while still providing strong current gain and low leakage current. It is often used in switching circuits to control the flow of electrical current from one component to another.
The JAN2N5152 is used in many different applications, including analog amplifiers, digital logic circuits, sample and hold applications, pulse generators, and even in test equipment. In digital logic circuits, the JAN2N5152 is used for switching logic levels, as well as for generating waveforms. It is also used in sample and hold circuits, where it is used to measure the value of an analog signal and hold it for a certain period of time.
The JAN2N5152 is an important component in switching circuits, and is widely used in many different applications. Its fast switching speed, low power requirements, and low leakage current make it an ideal choice for a wide range of applications. Whether it is used in analog amplifiers, digital logic circuits, or test equipment, the JAN2N5152 is a reliable and versatile switching transistor.
The specific data is subject to PDF, and the above content is for reference
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JAN2N5152 Datasheet/PDF