JAN2N5237 Allicdata Electronics
Allicdata Part #:

1086-21033-ND

Manufacturer Part#:

JAN2N5237

Price: $ 14.99
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 120V 10A TO-5
More Detail: Bipolar (BJT) Transistor NPN 120V 10A 1W Through ...
DataSheet: JAN2N5237 datasheetJAN2N5237 Datasheet/PDF
Quantity: 1000
100 +: $ 13.63350
Stock 1000Can Ship Immediately
$ 14.99
Specifications
Series: Military, MIL-PRF-19500/394
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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Introduction

The JAN2N5237 is a small-signal transistor that is categorized as a single bipolar junction transistor (BJT). It is available as a three terminal semiconductor device and has a variety of applications in a wide range of areas. It is constructed from materials such as silicone and germanium. The JAN2N5237 is one of the most common transistors used for many different purposes; this article will explain the working principle and the application fields of the JAN2N5237.

Working Principle

The JAN2N5237 transistor has three main sections: the emitter, collector, and base. These three sections control the current flow in the JAN2N5237 from the collector to the emitter. In the normal state, the transistor is off, but when given a potential difference, the transistor is turned on. This potential difference is applied to the base which sets up a strong electric field; this electric field causes a large current to flow from the collector to the emitter.

The current flowing through the emitter-collector path is controlled by the base current. Increasing the base current will increase the collector-emitter current, and decreasing the base current will decrease the collector-emitter current. The gain of the JAN2N5237 is the ratio of the collector current to the base current, and is usually very high. This amplification makes the JAN2N5237 very useful in many applications that require low power signals to control high power devices.

Application Fields

The JAN2N5237 has a variety of applications in both analog and digital circuits. The JAN2N5237 is often used as a switch in power circuits, such as switching high power transistors or relays. It can also be used to amplify small signals, such as those from microphones or Arduino sensors. The JAN2N5237 is also often used as an oscillator for timing circuits, and can drive lamps or motors.

The JAN2N5237 can also be used in amplifiers and signal processors. It can be used to construct common circuit configurations such as common-emitter and common-collector amplifiers. It can also be used in signal processors such as analog multipliers and filters.

Conclusion

The JAN2N5237 is a versatile single bipolar junction transistor that can be used in a wide variety of applications. It is constructed from materials such as silicone and germanium and is available as a three terminal semiconductor device. The JAN2N5237 has a variety of application fields, including the use as a switch in power circuits, signal amplifier, oscillator, and signal processor.

The specific data is subject to PDF, and the above content is for reference

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