
Allicdata Part #: | 1086-21035-ND |
Manufacturer Part#: |
JAN2N5237S |
Price: | $ 14.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 120V 10A TO39 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 10A 1W Through ... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 13.63350 |
Series: | Military, MIL-PRF-19500/394 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 1A, 10A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 5A, 5V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 (TO-205AD) |
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The JAN2N5237S is a type of Bipolar Junction Transistor (BJT), or commonly known as a BJT, which has been configured with either a PNP or an NPN design. It is a single transistor, meaning it has two active elements, two base terminals, two collector terminals, and one emitter terminal. This allows the transistor to be used in a wide range of applications, from switching and amplification to power conversion and rectification.
The JAN2N5237S is a medium power NPN type, designed for switching and low to medium current applications. Its collector current ratings range from 0.2 to 1A and its voltage ratings range from 30 to 100V. It is a silicon based device, operating in a variety of environments, including -55°C to +150°C temperature ranges.
The JAN2N5237S has an hFE rating of between 10 and 500, making it suitable for low- to medium-level amplification applications. As a result, it can be used in a variety of basic analog and digital circuits. Its high gain,collector current saturation, and response time characteristics make it an ideal device for audio amplifiers, transistor radio circuits, basic logic gates and flip-flops, and various kinds of logic circuits.
Another feature of the JAN2N5237S is its ability to handle high voltage. It has a maximum rated collector-emitter voltage rating of 150V, making it an ideal device for switching power supplies, Piezoelectric transducers, linear power supplies and HV rectifier circuits.
The JAN2N5237S can also be used as a High Voltage Switch and Low Voltage Switch. A high voltage switch is used in applications where low voltage switching is needed, such as in basic logic circuits and high voltage power amplifiers. A low voltage switch is used in applications requiring a wide range of switching voltages, such as in switching regulator designs and high speed signal processing.
The working principle of the JAN2N5237S transistor can be explained in terms of three basic operations, called the forward biased operation, the reverse biased operation, and the saturation operations. In the forward biased operation, the collector is maintained at a voltage of 0.6V above the base, and current flows from the collector to the emitter (CBE). In the reverse biased operation, the collector is maintained at a voltage of 0.6V lower than the base, resulting in no current and no collector current saturation (CBCS). Finally, the saturation operation occurs when the collector voltage reduces to 0.2V below the base, causing current to flow from the emitter to the collector (ECB).
In summary, the JAN2N5237S is a single transistor that can be used in a wide range of applications due to its ability to handle high voltage and its multiple operating principles. Its hFE rating makes it suitable for low- to medium-level amplification applications, and its wide range of switching voltages makes it an ideal device for switching power supplies, Piezoelectric transducers, linear power supplies and HV rectifier circuits. Furthermore, its low voltage switching capabilities makes it a great choice for basic logic circuits and high speed signal processing.
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