| Allicdata Part #: | 1086-16156-ND |
| Manufacturer Part#: |
JAN2N5662 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 200V 2A TO-5 |
| More Detail: | Bipolar (BJT) Transistor NPN 200V 2A 1W Through H... |
| DataSheet: | JAN2N5662 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | Military, MIL-PRF-19500/454 |
| Packaging: | Bulk |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 200V |
| Vce Saturation (Max) @ Ib, Ic: | 800mV @ 400mA, 2A |
| Current - Collector Cutoff (Max): | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 5V |
| Power - Max: | 1W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package: | TO-5 |
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The JAN2N5662 is a PNP silicon transistor designed for general purpose amplifier and switching applications. This transistor is manufactured and distributed by Fairchild Semiconductor. The JAN2N5662 is available in a TO-39 metal can package. This package is capable of withstanding shock and vibration.
JAN2N5662 belongs to the Transistors - Bipolar (BJT) - Single category. A BJT is a type of semiconductor device that consists of two junctions formed between three layers of semiconductor material. The three layers are referred to as the emitter, base, and collector. The current carrying capacity of a BJT is much greater than that of a field effect transistor (FET). BJTs are also more stable and efficient.
The JAN2N5662\'s main application is for general purpose amplifiers and switching. This device is suitable for use in both low power and medium power applications. The JAN2N5662 is especially popular for use in switching circuits such as analog switch controls and thermal bonding applications. Other applications include precision voltage references, level shifters, and buffer amplifiers. It can also be used in audio preamplifier circuits.
The JAN2N5662\'s operating temperature range is between -55C and 150C. It has a collector-emitter breakdown voltage of 60V and a collector-base breakdown voltage of 80V. The collector current ratings at different emitter voltages are given in the datasheet. This device is available in both a high gain version and a low gain version.
The working principle of the JAN2N5662 is similar to other BJT transistors. When a voltage is applied to the base of the transistor, electrons are drawn into the base region and are then accelerated towards the collector region. This causes a current to flow in the collector circuit, which is amplified by the PNP junction. The current gain of the device is determined by the ratio of the collector current to the base current.
The JAN2N5662 offers several advantages when used in the intended applications. It is relatively inexpensive and reliable, making it an ideal choice for cost-sensitive applications. The device is also highly efficient, making it suitable for high performance applications. The high breakdown voltage makes it resistant to voltage spikes, and the low current gain makes it suitable for switching applications.
In conclusion, The JAN2N5662 is a PNP silicon transistor designed for general purpose amplifier and switching applications. It is an ideal choice for power and performance-sensitive applications. The device has a low current gain and high breakdown voltage, making it suitable for a variety of applications. The working principle of the JAN2N5662 is similar to other BJT transistors and its main application is for general purpose amplifiers and switching.
The specific data is subject to PDF, and the above content is for reference
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JAN2N5662 Datasheet/PDF