JAN2N5665 Allicdata Electronics
Allicdata Part #:

1086-21062-ND

Manufacturer Part#:

JAN2N5665

Price: $ 24.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 300V 5A TO-66
More Detail: Bipolar (BJT) Transistor NPN 300V 5A 2.5W Through...
DataSheet: JAN2N5665 datasheetJAN2N5665 Datasheet/PDF
Quantity: 1000
100 +: $ 22.33330
Stock 1000Can Ship Immediately
$ 24.57
Specifications
Series: Military, MIL-PRF-19500/455
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Power - Max: 2.5W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)
Description

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The JAN2N5665 is a single branch bipolar junction transistor that is usually used in a wide range of applications. This device uses a N-type silicon collector and a P-type base to form its junction. By controlling the current in the base-emitter region, the transistor can provide a range of amplification and switching functions.

The application field of the JAN2N5665 device is diverse. It can be used as an amplifier, modulator, or oscillator in variety of applications. It can also be used to make controls for AC and DC motors, as well as for controlling the power supply for radios and audio systems. Additionally, it can be used for signal switching in electronic circuits, such as controlling the brightness of an LED.

The working principle of the JAN2N5665 is the same for all bipolar junction transistors. It relies on electrons’ ability to move between two materials (N-type, P-type) and create a current flow. By controlling the current in the base-emitter region, the current in the collector-emitter region is also altered, allowing the device to perform amplification or switching functions.

When the base-emitter region is forward-biased, an avalanche breakdown occurs, causing an increased current flow in the collector-emitter region. This extreme current increase is what allows the device to perform gain and switching functions. The current gain, or HFE, can be controlled and adjusted on the device by altering the emitter current and the applied base voltage.

Because of its simplicity, the JAN2N5665 can be adapted to a variety of applications. It is small enough to fit in tight spaces, and has a wide range of voltage and current capabilities that allow it to switch relatively large amounts of power.

In summary, the JAN2N5665 is a single branch bipolar junction transistor that is used for a variety of amplification and switching applications. Its low cost and overall simplicity makes it very applicable in today’s electronics designs, and can be used in fields such as medical, automotive, and telecommunications.

The specific data is subject to PDF, and the above content is for reference

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