| Allicdata Part #: | 1086-21064-ND |
| Manufacturer Part#: |
JAN2N5666 |
| Price: | $ 12.64 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 200V 5A TO5 |
| More Detail: | Bipolar (BJT) Transistor NPN 200V 5A 1.2W Through... |
| DataSheet: | JAN2N5666 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 11.49130 |
| Series: | Military, MIL-PRF-19500/455 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 5A |
| Voltage - Collector Emitter Breakdown (Max): | 200V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 5A, 1A |
| Current - Collector Cutoff (Max): | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 1A, 5V |
| Power - Max: | 1.2W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package: | TO-5 |
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The JAN2N5666 is a single-channel NPN medium-power transistor that is used for both switching and amplification applications. More specifically, the JAN2N5666 transistor is a low-noise, low-power silicon NPN transistor used for general medium-power switching and amplification operations. Because of its low noise and power characteristics, the JAN2N5666 is ideal for applications such as audio amplification, RF and microwave amplification, and analog circuits.
The JAN2N5666 transistor has a standard pin configuration. It has three pins with each pin having a different purpose. The pinned configuration is typically arranged from left to right. The base pin is the leftmost pin and is connected to the base of the transistor. The emitter pin is the middle pin and is connected to the emitter of the transistor. The collector pin is the rightmost pin and is connected to the collector of the transistor.
The JAN2N5666 working principle is simple and straightforward. In operation, a small electrical current is directed to the base terminal, which flows through the P–N junction between the base and emitter. This flow of current, called biasing, causes an increase in the number of minority carriers in the base region. These carriers travel from the base to the collector region, due to the applied electric field, and thereby, create collector current. This current is controlled by the current from the base.
In terms of applications, the JAN2N5666 is typically used for general-purpose switching and amplifier applications. It can be used to control relatively small voltages, currents, and power outputs since its maximum collector current is only 1 A. It finds use in many electronic projects including converters, amplifiers, and sound circuits. Additionally, it can also be used for switching in consumer electronics, automotive applications, and RF/microwave communications.
Overall, the JAN2N5666 transistor is a low-power, low-noise, medium-power NPN silicon transistor that is ideal for general switching and amplifier applications. Its standard pin configuration and simple operation make it a popular choice for many circuit designs.
The specific data is subject to PDF, and the above content is for reference
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JAN2N5666 Datasheet/PDF