| Allicdata Part #: | 1086-21093-ND |
| Manufacturer Part#: |
JAN2N6283 |
| Price: | $ 42.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN DARL 80V 20A TO-3 |
| More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 20A ... |
| DataSheet: | JAN2N6283 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 39.06890 |
| Series: | Military, MIL-PRF-19500/504 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 20A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max): | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1250 @ 10A, 3V |
| Power - Max: | 175W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3 |
| Supplier Device Package: | TO-3 (TO-204AA) |
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Introduction
JAN2N6283, also known as a 2N6283, is a device from the family of BJT (Bipolar Junction Transistor) devices. It is an NPN (Negative-Positive-Negative) device, specifically designed for use in high voltage and high current applications. The transistor is rated for a maximum collector-emitter voltage of 1200V and an operating power dissipation of 1.7W. This device is useful for providing reliable switching action in a number of applications, such as switching power supplies, motor control, audio and RF equipment, and other high-power circuits.
Applications
The JAN2N6283 provides a number of useful features for operation in high-power applications. It can be used in switching circuits, such as those associated with motor control, power supplies, audio amplifiers, RF equipment, and many others. It is also suitable for use in switching circuits that require high current and high voltage operation. In addition, it can be used in amplifier circuits that require low noise operation, as well as in feedback circuits for controlling and stabilizing operating current in complex circuits.
The JAN2N6283 can also be used in high-speed switching circuits, such as those used for frequency conversion or phase-locking loops. Its high voltage and high current capability make it ideal for use in power supply circuits, such as those found in switching power supplies or battery chargers. It is also suitable for use in circuits that require low-power operation, such as those associated with sensors, alarms, and other low-power devices.
Working Principle
The JAN2N6283 works on the principle of a PNP (positive-negative-positive) transistor. It is made up of an emitter, a base, and a collector. Current flows between the emitter and the collector when the base is supplied with a current. This operation of the transistor is used to control the current and voltage of the device, allowing it to switch between different states of operation. In addition, the base connection can also be used to adjust the current gain of the device, allowing it to be used in different types of circuits.
The JAN2N6283 is designed with an open-collector type connection. This means that the collector does not directly connect to the base, but is connected through a separate electrical contact. This allows for a lower voltage drop across the device, making it suitable for use in high voltage and high current applications.
The JAN2N6283 is also designed with a high level of isolation between the collector and the base. This ensures that the device can operate at high voltages without creating excessive capacitive or inductive coupling between the collector and the base. This isolates the device from any external electric fields, allowing it to operate in high-power switching and amplifier circuits with minimal interference.
Conclusion
The JAN2N6283 is a useful BJT device that can be used in a variety of high-voltage and high-current applications. Its high voltage and current ratings, low noise operation, and additional isolation capabilities make it ideal for use in power supply circuits and multiple switching circuits. Additionally, its open-collector configuration ensures a lower voltage drop across the device, making it suitable for use in high-power applications.
The specific data is subject to PDF, and the above content is for reference
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JAN2N6283 Datasheet/PDF