Series:	Military, MIL-PRF-19500/540
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	2V @ 16mA, 4A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 4A, 3V
Power - Max:	64W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-213AA, TO-66-2

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Introduction

The JAN2N6299 is a single bipolar junction transistor (BJT) device designed for use in a wide variety of applications. This article will first provide an overview of the devices features, followed by a description of its working principle and application field.

Features

The JAN2N6299 is a low-power NPN transistor with a Ic(max) of 100mA and a very low VCE(sat) of 0.2 V. The device has a high transition frequency of 16GHz, making it suitable for use in high-frequency applications. It is rated for use at a maximum power dissipation of 150 mW, and has a maximum collector emitter voltage of 30V.

Working Principle

Bipolar transistors consist of three regions: the emitter, the base, and the collector. When there is no potential difference between the emitter and the base, no current flows through the transistor. However, when the voltage between the emitter and the base is greater than a certain threshold (the base-emitter voltage), the current begins to flow, allowing current to pass from the emitter to the collector. It is this control over current flow which makes the bipolar transistor an excellent choice for switching, amplification, and other kinds of control circuitry.

Application Field

The high transition frequency and low VCE(sat) of the JAN2N6299 make it ideal for use in RF amplifiers, radios, and other high-frequency applications, as well as for switching applications. Additionally, its low power dissipation and relatively low collector-emitter voltage rating make it suitable for many low-voltage, low-power applications such as portable devices and experimental circuits.

Conclusion

The JAN2N6299 is a single bipolar junction transistor which is designed for a wide variety of applications. Its features make it suitable for use in RF amplifiers, radios, switching applications, and other low-voltage, low-power applications. Moreover, its high transition frequency, low VCE(sat), and low power dissipation make it an excellent choice for a wide range of applications.

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