JAN2N6674 Allicdata Electronics
Allicdata Part #:

1086-21122-ND

Manufacturer Part#:

JAN2N6674

Price: $ 104.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 300V 15A TO3
More Detail: Bipolar (BJT) Transistor NPN 300V 15A 6W Through ...
DataSheet: JAN2N6674 datasheetJAN2N6674 Datasheet/PDF
Quantity: 1000
100 +: $ 94.74920
Stock 1000Can Ship Immediately
$ 104.23
Specifications
Series: Military, MIL-PRF-19500/537
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 2V
Power - Max: 6W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Description

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The JAN2N6674 is a silicon, NPN transistor designed for general purpose switching and amplification applications. It is part of the group of single Bipolar Junction Transistors (BJT). The device has a rated current of 500mA, a collector-emitter voltage of 40V, and a power dissipation of 250mW max. It also has a collector-emitter saturation voltage of 400mV. This transistor is commonly used for driving medium-sized audio amplifiers of up to around 20 watts.

Application Field

The JAN2N6674 transistor is typically used for driving medium-sized audio amplifiers. It can also be used for general purpose switching and amplification applications, including powering up relays, transducer amplifiers, and low-intensity audio amplifier circuits. The high gain and high current of the transistor make it suitable for a wide variety of applications.

Working Principle

Single BJTs are made up of three layers of semiconductor material, each doped with specific impurities to produce distinct properties. These layers are called the emitter, base, and collector. Carriers of both polarities, which are the basis of electronic current, move from the emitter to the base. The base is made from a thin layer of material, which acts as a transition region. The low-resistance base-emitter junction allows positive dc current flow from the emitter to the base, as well as a corresponding negative flow of holes from the base to the emitter. This allows charge carriers, which are electrons and holes, to flow through the NPN transistor.

When the base voltage is increased, more charge carriers are injected into the base region, resulting in increased current flow through the collector-emitter section. This is known as the transistor’s amplification factor or gain. The collector voltage is a function of the base-emitter voltage, and the two must be balanced in order for the transistor to work properly.

The JAN2N6674 transistor operates by collecting electrons at the collector and providing an outflow of electrons at the emitter. The transistor receives a voltage signal between the base and the emitter, which serves to switch the collector current. Depending on the polarity of the input voltage, current flows from the collector or from the emitter. When the base voltage increases, the collector voltage decreases, hence allowing the transistor to amplify a low-level signal to a higher-level output.

Conclusion

The JAN2N6674 is a single-bipolar NPN transistor ideal for applications such as driving medium-sized audio amplifiers and general purpose switching and amplification. It received a voltage signal between the base and the emitter to switch the collector current, while the collector voltage is a function of the base-emitter voltage. With its high current, low-voltage, and high-gain characteristics, this transistor is suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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