JAN2N6675

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JAN2N6675 Application Field and Working Principle

The JAN2N6675 is a planar passivated NPN medium power transistor used for audio and general purpose switching applications. Sourced by multiple manufacturers, this device type is also known as the 2N6675. Manufactured in the medium power range, this NPN transistor is a two-terminal, three-layer device, meaning that it has two terminals and three junctions within it. The device has its own inherent gain or amplification qualities, and can be found in many electronic circuits, from basic switches and amplifiers, to more complex circuits like high-frequency transistors, power amplifiers, temperature control circuits and voltage regulators.

Applications

The JAN2N6675 is popularly used in numerous audio and general purpose switching applications, such as audio power amplifiers and power optical switching. It can also be employed in non-audio circuits, such as high-power switching applications, voltage regulators, temperature control circuits, and DC motor controllers. This device is also suitable for use in oscillators and amplification stages in frequency up to 10MHz. Its medium power rating is excellent for power switching, line drivers, and high-frequency amplifiers. Additionally, this device can be used for temperature control, DC motor control, electronic control of illumination, power UPS, and various audio and communications applications.

Features/Benefits

Thanks to its two-terminal, three-layer structure, the JAN2N6675 offers a number of attractive features and benefits. First and foremost, it is a medium power transistor capable of withstanding very high voltages, up to 700V, without any rating issue. It also offers an operating temperature range of -55 to 150°C. Moreover, it has a maximum DC collector current of 3A and its collector-emitter voltage rating is 60V. For proper functioning, the device requires a minimum emitter-base voltage of 2V with a minimum DC current rating of 5mA.

Working Principle

The JAN2N6675 is an NPN transistor, whose working principle is based on the physical behavior of electrons. In any NPN transistor, the N-type and P-type materials are placed next to each other, forming two junctions between them. The third junction is a Base-Emitter junction in which electrons pass from N to P type material when the transistor is switched on. As the current from the Base-Emitter junction increases, the electrons in the N-type material move toward the P-type material, creating a depletion zone between them. This, in turn, results in the transistor being able to control the current from the Collector to the Emitter. When the transistor is turned ON, it allows a small current to flow between the Collector and Emitter, and this current in turn increases with respect to the current from the Base-Emitter junction.

Conclusion

The JAN2N6675 is a versatile and reliable NPN medium power transistor that can be used in a variety of applications, from basic audio and general purpose switching, to more complex applications like high-frequency transistors, power amplifiers, temperature control circuits, and voltage regulators. With its two-terminal, three-layer structure, this device offers maximum DC collector current of 3A and its collector-emitter voltage rating is 60V. The keys to its successful operation are the proper setting and maintenance of the emitter-base voltage and current levels.

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