Allicdata Part #: | JAN2N6788U-ND |
Manufacturer Part#: |
JAN2N6788U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 18-LCC |
More Detail: | N-Channel 100V 4.5A (Tc) 800mW (Tc) Surface Mount ... |
DataSheet: | JAN2N6788U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Power Dissipation (Max): | 800mW (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 18-ULCC (9.14x7.49) |
Package / Case: | 18-CLCC |
Series: | Military, MIL-PRF-19500/555 |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
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The JAN2N6788U is a N-channel silicon junction field-effect transistor (JFET) that was designed as a high-performance amplifier and switching device specifically for wideband use, with a frequency range of up to 500 MHz. It is an all-around type of JFET that is commonly used for various applications, including audio amplifiers, signal processors, analog switches, and linear amplifiers.
The JAN2N6788U is a primarily N-channel MOSFET transistor, which is known for its low power consumption, high output drive capability, and high frequency operation. It is also characterized by using a very low input capacitance and reverse transfer capacitance along with a high source-drain breakdown voltage. The JAN2N6788U is built with an isolated-gate structure which is extremely reliable and robust, and is considered very useful in suppressing oscillation due to its low input capacitance.
JAN2N6788U transistors offer a wide range of advantages in signal and power amplifiers. They can be used as amplifiers of signal or voltage, current amplifiers, and as power switches. Their wide operating range allows them to be used in both AC and DC circuits and as current or voltage regulators. They are also preferred over BJTs because they have fewer propagation delays and require fewer passive components.
The working principle of the JAN2N6788U is based on the basic idea of considering the gate terminal as the input and the drain terminal as the output. Applying a voltage at the gate input will cause a depletion region that prevents current from flowing between the source and the drain terminals. When electrons pass through the depletion region, a voltage gain occurs which allows current to flow from the drain to the source. This results in an amplified output at the drain terminal.
In addition to amplifying signals, the JAN2N6788U can also be used to switch current and voltage. This is accomplished by using a voltage at the gate terminal to control the current or voltage at the drain terminal. The JAN2N6788U can be used to switch large amounts of current and voltage, making it an ideal choice for many applications. It is also commonly used as a switching device in power supply designs.
Due to its relevance and wide range of use, the JAN2N6788U has become the go-to N-channel MOSFET for many design engineers. It offers a wide range of advantages that make it suitable for a variety of applications, from low-frequency amplifier circuits to high-frequency switching designs. Its high-performance design also makes it a great option for audio and musical applications as well.
The specific data is subject to PDF, and the above content is for reference
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