JAN2N6790U

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The JAN2N6790U is a silicon NPN epitaxial-base transistor by Microsemi Corporation that is intended for use in military and space environments. As a single general-purpose transistor, it can be used in a variety of applications. More specifically, it is often used in low-power amplifier, switching, and switching regulator circuits.

The JAN2N6790U’s main operating characteristics include a collector-emitter voltage of 80V, a current gain of 55-120, and an operating temperature range of -65 to 150°C. The package for the transistor is TO-39. The JAN2N6790U is made to be tolerant of high-radiation levels and is available in both a tin-whisker resistant and antimony-free version.

The JAN2N6790U is a field-effect transistor (FET) – specifically a metal-oxide semiconductor field-effect transistor (MOSFET) – that has been fabricated using an N-type MOS (NMOS) process. It consists of a single gate and drain. The drain is an N-type diffusion and the source is an internal P-type diffusion. The gate is surrounded by an oxide insulator and is connected to the drain.

The working principle of the JAN2N6790U is based on its design. By applying a voltage across the gate and drain, a current will flow through the MOSFET. The magnitude of this current is determined by the amount of voltage applied. When the voltage exceeds a certain threshold, the gate will become charged and turn on the transistor, allowing the current to flow.

The gate voltage determines how the JAN2N6790U will behave. At higher gate voltages, the MOSFET will act as a current switch and will remain on until the voltage reaches a certain level. At lower gate voltages, the MOSFET will act more like a resistor and the current will increase gradually.

The range of applications for the JAN2N6790U is wide, as it offers reliable operation even in tough environments. It can be used for low-power amplifiers, switching regulator circuits, switching applications, and motor control. Its low cost and good radiation resistance make it a popular choice for many high-reliability applications in the aerospace and defense industries.

The JAN2N6790U single general-purpose FET is an ideal choice for many applications, particularly those in extreme working environments. Its design and working principle make it an effective and reliable transistor, perfect for demanding applications in aerospace and defense industries.

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