JAN2N6990

Series:	Military, MIL-PRF-19500/559
Packaging:	Bulk
Part Status:	Active
Transistor Type:	4 NPN (Quad)
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	400mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	14-Flatpack
Supplier Device Package:	14-Flatpack

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IntroductionThe JAN2N6990 is an N-channel MOSFET array employed in dual match pair applications. It is made of three discrete devices – junction field-effect transistor (JFET), bipolar junction transistor (BJT), and complementary metal oxide semiconductor (CMOS). The array is designed for low-noise, low-phase distortion preamplifier/post amplifier use, noise matched to better than 0.5 dB over the range from 200 Hz to 10 kHz. It is fabricated using the latest planar process technology, has a maximum operating temperature of 125°C and is available in either a can or in molded epoxy packages. Application FieldThe JAN2N6990 is a versatile, low-cost FET array with dual match pair applications in low-noise, low-phase distortion preamplifier/post amplifier use. It is suitable for use in audio and video signal conditioning circuits, small signal stages, active filters and video switching circuits. It can also be used to drive LED displays and high performance motor feedback and control systems. The JAN2N6990 allows for the use of one FET array component to achieve dual match pair circuit characteristics. By taking advantage of this characteristic, engineers can create circuit designs with minimal component count and better performance than with conventional circuits. Working PrincipleThe JAN2N6990 has three separate devices within a single integrated package, each of which is designed to provide distinct characteristics for low-noise and low-phase distortion operation. The two PN junction FETs (JFETs) provide excellent linearity and low AC noise performance. The two NPN transistors (BJTs) provide excellent power gain, switch on/off capability and can operate at very high frequency. The MOSFET (CMOS) device in the array provides additional power gain, improved isolation between FETs and increased speed of operation.The two FETs in the array work together to form a matched pair, allowing signal gain and shaping with minimal distortion. The FETs have equal signal-to-noise ratio and low temperature coefficient, making them ideal for low noise and low phase distortion applications. The two BJTs act as switching devices, allowing signal to pass through the array with minimal distortion. The two BJTs can also be used for fast switching applications, such as for driving LED displays or for motor feedback and control systems.The CMOS in the array also plays an important role, providing additional power gain and improved isolation between the FETs. The CMOS device also increases speed of operation and reduces the noise susceptibility of the overall device.ConclusionThe JAN2N6990 is a versatile and cost-effective FET array, suitable for use in many low-noise and low-phase distortion applications. It has three discrete devices within a single integrated package, allowing for dual match pair characteristics with minimal component count. The FETs in the array provide linearity and low AC noise performance, while the BJTs provide excellent power gain, fast switching capability and high-frequency operation. The CMOS device in the array also provides additional power gain, improved isolation and increased speed of operation.

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