JAN2N718A Allicdata Electronics
Allicdata Part #:

1086-16220-ND

Manufacturer Part#:

JAN2N718A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 30V 0.5A
More Detail: Bipolar (BJT) Transistor NPN 30V 500mA 500mW Thro...
DataSheet: JAN2N718A datasheetJAN2N718A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/181
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)
Description

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The JAN2N718A is a single transistor and is made of semiconductor material. It is a bipolar junction transistor (BJT) and is used for a variety of purposes. The JAN2N718A is also known as a n-channel JFET or a depletion-mode MOSFET and is often used in amplifiers, signal switches, and circuits that require varying levels of input power. This device is typically used in audio, digital and other low-frequency applications.

The JAN2N718A is an n-channel FET device meaning that it has a positive gate voltage. When a voltage is applied to the gate, the gate-source voltage is increased and current flow is reduced. The JAN2N718A is an uni-polar device, meaning that the FET remains on or off in response to a single control signal. In comparison, p-channel FETs require both a positive and negative bias for switching.

The JAN2N718A has some distinct advantages over other transistors. It offers a low leakage current, with a maximum leakage of 1.5 µA. It also has a relatively consistent drain current with different gate voltages and is not affected by capacitive loading from other circuits. In addition, the FET is able to withstand high frequencies, making it suitable for high-speed applications. It can also operate at higher temperatures than other transistors and provides a low on-resistance.

The JAN2N718A is commonly used in applications such as power amplifiers, analog switches, and high-frequency analog circuits. It can be used as a switching element for logic circuits, and it can be used to control power transistors in analog-to-digital converters. The JAN2N718A can also be used as an input stage in audio amplifiers and can be used to reduce the distortion in amplifiers.

The JAN2N718A has a wide range of practical applications. It can be used to build audio amplifiers, mixers, and stereo amplifiers. It can also be used to construct audio preamplifiers, filter circuits, and transmitters. It is an ideal choice for low-noise application circuits, such as audio device amplifiers and low-noise preamplifiers. The JAN2N718A can also be used for low-frequency sound mixing and signal conditioning, such as boosting and equalization.

The working principle of the JAN2N718A is quite simple. When a voltage is applied to the gate, the current passing from the source to the drain is increased and the FET turns on. When the voltage is removed, the current decreases and the FET turns off. The drain current is relatively constant over a wide range of gate voltages, making the FET ideal for low-noise applications.

In conclusion, the JAN2N718A is a single transistor and bipolar junction transistor (BJT) and is used for a variety of applications. It offers a low leakage current and a relatively consistent drain current with different gate voltages. The JAN2N718A is commonly used in applications such as power amplifiers, analog switches, and high-frequency analog circuits. The working principle of the JAN2N718A is quite simple and makes it an ideal choice for low-noise applications.

The specific data is subject to PDF, and the above content is for reference

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